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Datasheets found :: 1351361Page: << | 14186 | 14187 | 14188 | 14189 | 14190 | 14191 | 14192 | 14193 | 14194 | 14195 | 14196 | >>
Nr.Part NameDescriptionManufacturer by
567601IRF250200V Single N-Channel Hi-Rel MOSFET in a TO-204AE packageInternational Rectifier
567602IRF250N-CHANNEL POWER MOSFETSemeLAB
567603IRF25030A/ 200V/ 0.085 Ohm/ N-Channel Power MOSFETIntersil
567604IRF250N-CHANNEL POWER MOSFETSSamsung Electronic
567605IRF250N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A.General Electric Solid State
567606IRF250SMDN.CHANNEL POWER MOSFETSemeLAB
567607IRF251N-CHANNEL POWER MOSFETSSamsung Electronic
567608IRF251N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 30A.General Electric Solid State
567609IRF25125A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETsIntersil
567610IRF252N-CHANNEL POWER MOSFETSSamsung Electronic
567611IRF252N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 25A.General Electric Solid State
567612IRF25225A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETsIntersil
567613IRF253N-CHANNEL POWER MOSFETSSamsung Electronic
567614IRF253N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 25A.General Electric Solid State
567615IRF25325A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETsIntersil
567616IRF280440V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
567617IRF2804L40V Single N-Channel HEXFET Power MOSFET in a TO-262 packageInternational Rectifier
567618IRF2804S40V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567619IRF2804S-7PAUTOMOTIVE MOSFETInternational Rectifier



567620IRF280555V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
567621IRF2805L55V Single N-Channel HEXFET Power MOSFET in a TO-262 packageInternational Rectifier
567622IRF2805S55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567623IRF280775V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
567624IRF2807L75V Single N-Channel HEXFET Power MOSFET in a TO-262 packageInternational Rectifier
567625IRF2807PBF75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
567626IRF2807S75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567627IRF2807STRL75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567628IRF2807STRL-11175V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567629IRF2807STRR75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567630IRF2807Z75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
567631IRF2807ZL75V Single N-Channel HEXFET Power MOSFET in a TO-262 PackageInternational Rectifier
567632IRF2807ZS75V Single N-Channel HEXFET Power MOSFET in a D2Pak PackageInternational Rectifier
567633IRF2907S75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567634IRF2907Z75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
567635IRF2907ZL75V Single N-Channel HEXFET Power MOSFET in a TO-262 packageInternational Rectifier
567636IRF2907ZS75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567637IRF2907ZS-7PPBFIRF2907ZS-7PPBFInternational Rectifier
567638IRF2907ZS-7PPBFIRF2907ZS-7PPBFInternational Rectifier
567639IRF30050W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSEDetc
567640IRF30050W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSEDetc



Datasheets found :: 1351361Page: << | 14186 | 14187 | 14188 | 14189 | 14190 | 14191 | 14192 | 14193 | 14194 | 14195 | 14196 | >>
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