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Datasheets found :: 1351361Page: << | 14185 | 14186 | 14187 | 14188 | 14189 | 14190 | 14191 | 14192 | 14193 | 14194 | 14195 | >>
Nr.Part NameDescriptionManufacturer by
567561IRF230N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A.General Electric Solid State
567562IRF230-233N-Channel Power MOSFETs/ 12A/ 150-200 VFairchild Semiconductor
567563IRF231N-Channel Power MOSFETs/ 12A/ 150-200 VFairchild Semiconductor
567564IRF2318.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETsIntersil
567565IRF231N-CHANNEL POWER MOSFETSSamsung Electronic
567566IRF231N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A.General Electric Solid State
567567IRF232N-Channel Power MOSFETs/ 12A/ 150-200 VFairchild Semiconductor
567568IRF2328.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETsIntersil
567569IRF232N-CHANNEL POWER MOSFETSSamsung Electronic
567570IRF232N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A.General Electric Solid State
567571IRF233N-Channel Power MOSFETs/ 12A/ 150-200 VFairchild Semiconductor
567572IRF2338.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETsIntersil
567573IRF233N-CHANNEL POWER MOSFETSSamsung Electronic
567574IRF233N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A.General Electric Solid State
567575IRF2348.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETsIntersil
567576IRF2358.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETsIntersil
567577IRF2368.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETsIntersil
567578IRF2378.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETsIntersil



567579IRF240200V Single N-Channel Hi-Rel MOSFET in a TO-204AE packageInternational Rectifier
567580IRF240N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONSSemeLAB
567581IRF240N-Channel Power MOSFETs/ 18A/ 150-200VFairchild Semiconductor
567582IRF24018A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFETIntersil
567583IRF240N-CHANNEL POWER MOSFETSamsung Electronic
567584IRF240-243N-Channel Power MOSFETs/ 18A/ 150-200VFairchild Semiconductor
567585IRF240SMDN.CHANNEL POWER MOSFETSemeLAB
567586IRF241N-Channel Power MOSFETs/ 18A/ 150-200VFairchild Semiconductor
567587IRF241N-CHANNEL POWER MOSFETSamsung Electronic
567588IRF241N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A.General Electric Solid State
567589IRF24116A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETsIntersil
567590IRF242N-Channel Power MOSFETs/ 18A/ 150-200VFairchild Semiconductor
567591IRF242N-CHANNEL POWER MOSFETSamsung Electronic
567592IRF24216A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETsIntersil
567593IRF243N-Channel Power MOSFETs/ 18A/ 150-200VFairchild Semiconductor
567594IRF243N-CHANNEL POWER MOSFETSamsung Electronic
567595IRF243N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A.General Electric Solid State
567596IRF24316A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETsIntersil
567597IRF24414A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETsIntersil
567598IRF24514A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETsIntersil
567599IRF24614A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETsIntersil
567600IRF24714A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETsIntersil



Datasheets found :: 1351361Page: << | 14185 | 14186 | 14187 | 14188 | 14189 | 14190 | 14191 | 14192 | 14193 | 14194 | 14195 | >>
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