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Datasheets found :: 1351361Page: << | 14181 | 14182 | 14183 | 14184 | 14185 | 14186 | 14187 | 14188 | 14189 | 14190 | 14191 | >>
Nr.Part NameDescriptionManufacturer by
567401IRF1010NSTRL55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567402IRF1010NSTRR55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567403IRF1010Z55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
567404IRF1010ZL55V Single N-Channel HEXFET Power MOSFET in a TO-262 packageInternational Rectifier
567405IRF1010ZS55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567406IRF110440V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
567407IRF1104L40V Single N-Channel HEXFET Power MOSFET in a TO-262 packageInternational Rectifier
567408IRF1104PBF40V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
567409IRF1104S40V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567410IRF1104STRL40V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567411IRF1104STRR40V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567412IRF120N-Channel Power MOSFETs/ 11 A/ 60-100 VFairchild Semiconductor
567413IRF1208.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETsIntersil
567414IRF120N-CHANNEL POWER MOSFETSSamsung Electronic
567415IRF120N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A.General Electric Solid State
567416IRF120-123N-Channel Power MOSFETs/ 11 A/ 60-100 VFairchild Semiconductor
567417IRF121N-Channel Power MOSFETs/ 11 A/ 60-100 VFairchild Semiconductor
567418IRF1218.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETsIntersil



567419IRF121N-CHANNEL POWER MOSFETSSamsung Electronic
567420IRF121N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A.General Electric Solid State
567421IRF122N-Channel Power MOSFETs/ 11 A/ 60-100 VFairchild Semiconductor
567422IRF1228.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETsIntersil
567423IRF122N-CHANNEL POWER MOSFETSSamsung Electronic
567424IRF122N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A.General Electric Solid State
567425IRF123N-Channel Power MOSFETs/ 11 A/ 60-100 VFairchild Semiconductor
567426IRF1238.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETsIntersil
567427IRF123N-CHANNEL POWER MOSFETSSamsung Electronic
567428IRF123N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A.General Electric Solid State
567429IRF130100V Single N-Channel Hi-Rel MOSFET in a TO-204AA packageInternational Rectifier
567430IRF130N-CHANNEL POWER MOSFETSemeLAB
567431IRF130N-Channel Power MOSFETs/ 20 A/ 60-100 VFairchild Semiconductor
567432IRF13014A/ 100V/ 0.160 Ohm/ N-Channel Power MOSFETIntersil
567433IRF130N-CHANNEL POWER MOSFETSSamsung Electronic
567434IRF130N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A.General Electric Solid State
567435IRF130-133N-Channel Power MOSFETs/ 20 A/ 60-100 VFairchild Semiconductor
567436IRF130220V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
567437IRF1302L20V Single N-Channel HEXFET Power MOSFET in a TO-262 packageInternational Rectifier
567438IRF1302S20V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567439IRF130SMDN-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONSSemeLAB
567440IRF131N-Channel Power MOSFETs/ 20 A/ 60-100 VFairchild Semiconductor



Datasheets found :: 1351361Page: << | 14181 | 14182 | 14183 | 14184 | 14185 | 14186 | 14187 | 14188 | 14189 | 14190 | 14191 | >>
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