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Datasheets found :: 1351361Page: << | 14184 | 14185 | 14186 | 14187 | 14188 | 14189 | 14190 | 14191 | 14192 | 14193 | 14194 | >>
Nr.Part NameDescriptionManufacturer by
567521IRF153N-Channel Power MOSFETs/ 40 A/ 60 V/100 VFairchild Semiconductor
567522IRF153N-CHANNEL POWER MOSFETSSamsung Electronic
567523IRF153N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A.General Electric Solid State
567524IRF15333A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETsIntersil
567525IRF160775V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
567526IRF1704Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A¨ì)International Rectifier
567527IRF1704Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A¨ì)International Rectifier
567528IRF1730GPower MOSFET(Vdss=400V/ Rds(on)=1.0ohm/ Id=3.7A)International Rectifier
567529IRF190220V Single N-Channel HEXFET Power MOSFET in a SO-8 packageInternational Rectifier
567530IRF1902TR20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageInternational Rectifier
567531IRF20050W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSEDetc
567532IRF20050W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSEDetc
567533IRF200S100RJ50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSEDetc
567534IRF200S100RJ50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSEDetc
567535IRF220N-Channel Power MOSFETs/ 7A/ 150-200VFairchild Semiconductor
567536IRF2204.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETsIntersil
567537IRF220N-CHANNEL POWER MOSFETSSamsung Electronic
567538IRF220N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A.General Electric Solid State



567539IRF220-223N-Channel Power MOSFETs/ 7A/ 150-200VFairchild Semiconductor
567540IRF220440V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
567541IRF2204L40V Single N-Channel HEXFET Power MOSFET in a TO-262 packageInternational Rectifier
567542IRF2204S40V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567543IRF221N-Channel Power MOSFETs/ 7A/ 150-200VFairchild Semiconductor
567544IRF2214.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETsIntersil
567545IRF221N-CHANNEL POWER MOSFETSSamsung Electronic
567546IRF221N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A.General Electric Solid State
567547IRF222N-Channel Power MOSFETs/ 7A/ 150-200VFairchild Semiconductor
567548IRF2224.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETsIntersil
567549IRF222N-CHANNEL POWER MOSFETSSamsung Electronic
567550IRF222N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A.General Electric Solid State
567551IRF223N-Channel Power MOSFETs/ 7A/ 150-200VFairchild Semiconductor
567552IRF2234.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETsIntersil
567553IRF223N-CHANNEL POWER MOSFETSSamsung Electronic
567554IRF223N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A.General Electric Solid State
567555IRF224(IRF225) HEXFET TransistorsInternational Rectifier
567556IRF230200V Single N-Channel Hi-Rel MOSFET in a TO-204AA packageInternational Rectifier
567557IRF230N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSemeLAB
567558IRF230N-Channel Power MOSFETs/ 12A/ 150-200 VFairchild Semiconductor
567559IRF2308.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETsIntersil
567560IRF230N-CHANNEL POWER MOSFETSSamsung Electronic



Datasheets found :: 1351361Page: << | 14184 | 14185 | 14186 | 14187 | 14188 | 14189 | 14190 | 14191 | 14192 | 14193 | 14194 | >>
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