| 755721 | IRF220-223 | N-Channel Power MOSFETs/ 7A/ 150-200V | Fairchild Semiconductor |
| 755722 | IRF2204 | 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
| 755723 | IRF2204L | 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package | International Rectifier |
| 755724 | IRF2204LPBF | 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package | International Rectifier |
| 755725 | IRF2204PBF | 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
| 755726 | IRF2204S | 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
| 755727 | IRF2204SPBF | 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
| 755728 | IRF221 | N-Channel Power MOSFETs/ 7A/ 150-200V | Fairchild Semiconductor |
| 755729 | IRF221 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. | General Electric Solid State |
| 755730 | IRF221 | 4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs | Intersil |
| 755731 | IRF221 | Trans MOSFET N-CH 150V 5A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 755732 | IRF221 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 755733 | IRF222 | N-Channel Power MOSFETs/ 7A/ 150-200V | Fairchild Semiconductor |
| 755734 | IRF222 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. | General Electric Solid State |
| 755735 | IRF222 | 4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs | Intersil |
| 755736 | IRF222 | Trans MOSFET N-CH 200V 4A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 755737 | IRF222 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 755738 | IRF223 | N-Channel Power MOSFETs/ 7A/ 150-200V | Fairchild Semiconductor |
| 755739 | IRF223 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. | General Electric Solid State |
|
| 755740 | IRF223 | 4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs | Intersil |
| 755741 | IRF223 | Trans MOSFET N-CH 150V 4A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 755742 | IRF223 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 755743 | IRF224 | (IRF225) HEXFET Transistors | International Rectifier |
| 755744 | IRF230 | N-Channel Power MOSFETs/ 12A/ 150-200 V | Fairchild Semiconductor |
| 755745 | IRF230 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. | General Electric Solid State |
| 755746 | IRF230 | 200V Single N-Channel Hi-Rel MOSFET in a TO-204AA package | International Rectifier |
| 755747 | IRF230 | 8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs | Intersil |
| 755748 | IRF230 | Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 755749 | IRF230 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 755750 | IRF230 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET | SemeLAB |
| 755751 | IRF230-233 | N-Channel Power MOSFETs/ 12A/ 150-200 V | Fairchild Semiconductor |
| 755752 | IRF230N | Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 755753 | IRF231 | N-Channel Power MOSFETs/ 12A/ 150-200 V | Fairchild Semiconductor |
| 755754 | IRF231 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. | General Electric Solid State |
| 755755 | IRF231 | 8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs | Intersil |
| 755756 | IRF231 | Trans MOSFET N-CH 150V 9A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 755757 | IRF231 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 755758 | IRF231R | Trans MOSFET N-CH 150V 9A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 755759 | IRF232 | N-Channel Power MOSFETs/ 12A/ 150-200 V | Fairchild Semiconductor |
| 755760 | IRF232 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. | General Electric Solid State |
