755681 | IRF1503 | 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
755682 | IRF1503L | 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package | International Rectifier |
755683 | IRF1503LPBF | 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package | International Rectifier |
755684 | IRF1503PBF | 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
755685 | IRF1503S | 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
755686 | IRF1503STRLPBF | 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
755687 | IRF150CF | Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
755688 | IRF150SMD | N-CHANNEL POWER MOSFET | SemeLAB |
755689 | IRF151 | N-Channel Power MOSFETs/ 40 A/ 60 V/100 V | Fairchild Semiconductor |
755690 | IRF151 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. | General Electric Solid State |
755691 | IRF151 | 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs | Intersil |
755692 | IRF151 | Trans MOSFET N-CH 80V 30A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
755693 | IRF151 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
755694 | IRF152 | N-Channel Power MOSFETs/ 40 A/ 60 V/100 V | Fairchild Semiconductor |
755695 | IRF152 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. | General Electric Solid State |
755696 | IRF152 | 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs | Intersil |
755697 | IRF152 | Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
755698 | IRF152 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
755699 | IRF152R | Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
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755700 | IRF153 | N-Channel Power MOSFETs/ 40 A/ 60 V/100 V | Fairchild Semiconductor |
755701 | IRF153 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A. | General Electric Solid State |
755702 | IRF153 | 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs | Intersil |
755703 | IRF153 | Trans MOSFET N-CH 80V 30A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
755704 | IRF153 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
755705 | IRF153R | Trans MOSFET N-CH 80V 30A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
755706 | IRF1607 | 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
755707 | IRF1607PBF | 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
755708 | IRF1704 | Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A¨ì) | International Rectifier |
755709 | IRF1730G | Power MOSFET(Vdss=400V/ Rds(on)=1.0ohm/ Id=3.7A) | International Rectifier |
755710 | IRF1902 | 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package | International Rectifier |
755711 | IRF1902TR | 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package | International Rectifier |
755712 | IRF1902TRPBF | 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package | International Rectifier |
755713 | IRF1902UPBF | 20V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market | International Rectifier |
755714 | IRF200 | 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED | etc |
755715 | IRF200S100RJ | 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED | etc |
755716 | IRF220 | N-Channel Power MOSFETs/ 7A/ 150-200V | Fairchild Semiconductor |
755717 | IRF220 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. | General Electric Solid State |
755718 | IRF220 | 4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs | Intersil |
755719 | IRF220 | Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
755720 | IRF220 | N-CHANNEL POWER MOSFETS | Samsung Electronic |