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Datasheets found :: 1726161
Page: << | 18888 | 18889 | 18890 | 18891 | 18892 | 18893 | 18894 | 18895 | 18896 | 18897 | 18898 | >>
No.Part NameDescriptionManufacturer
755681IRF150330V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
755682IRF1503L30V Single N-Channel HEXFET Power MOSFET in a TO-262 packageInternational Rectifier
755683IRF1503LPBF30V Single N-Channel HEXFET Power MOSFET in a TO-262 packageInternational Rectifier
755684IRF1503PBF30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
755685IRF1503S30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
755686IRF1503STRLPBF30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
755687IRF150CFTrans MOSFET N-CH 100V 40A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
755688IRF150SMDN-CHANNEL POWER MOSFETSemeLAB
755689IRF151N-Channel Power MOSFETs/ 40 A/ 60 V/100 VFairchild Semiconductor
755690IRF151N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A.General Electric Solid State
755691IRF15133A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETsIntersil
755692IRF151Trans MOSFET N-CH 80V 30A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
755693IRF151N-CHANNEL POWER MOSFETSSamsung Electronic
755694IRF152N-Channel Power MOSFETs/ 40 A/ 60 V/100 VFairchild Semiconductor
755695IRF152N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A.General Electric Solid State
755696IRF15233A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETsIntersil
755697IRF152Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
755698IRF152N-CHANNEL POWER MOSFETSSamsung Electronic
755699IRF152RTrans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-3New Jersey Semiconductor


755700IRF153N-Channel Power MOSFETs/ 40 A/ 60 V/100 VFairchild Semiconductor
755701IRF153N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A.General Electric Solid State
755702IRF15333A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETsIntersil
755703IRF153Trans MOSFET N-CH 80V 30A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
755704IRF153N-CHANNEL POWER MOSFETSSamsung Electronic
755705IRF153RTrans MOSFET N-CH 80V 30A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
755706IRF160775V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
755707IRF1607PBF75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
755708IRF1704Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A¨ì)International Rectifier
755709IRF1730GPower MOSFET(Vdss=400V/ Rds(on)=1.0ohm/ Id=3.7A)International Rectifier
755710IRF190220V Single N-Channel HEXFET Power MOSFET in a SO-8 packageInternational Rectifier
755711IRF1902TR20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageInternational Rectifier
755712IRF1902TRPBF20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageInternational Rectifier
755713IRF1902UPBF20V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer marketInternational Rectifier
755714IRF20050W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSEDetc
755715IRF200S100RJ50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSEDetc
755716IRF220N-Channel Power MOSFETs/ 7A/ 150-200VFairchild Semiconductor
755717IRF220N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A.General Electric Solid State
755718IRF2204.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETsIntersil
755719IRF220Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
755720IRF220N-CHANNEL POWER MOSFETSSamsung Electronic


Datasheets found :: 1726161
Page: << | 18888 | 18889 | 18890 | 18891 | 18892 | 18893 | 18894 | 18895 | 18896 | 18897 | 18898 | >>


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