| 62801 | 1S73 | Germanium GOLDBOND diode | TOSHIBA |
| 62802 | 1S73A | General-purpose switching diode | TOSHIBA |
| 62803 | 1S73A | Germanium GOLDBOND diode | TOSHIBA |
| 62804 | 1S750 | Silicon Point Contact Epitaxial, intended for use in UHF Tuner Mixer | Hitachi Semiconductor |
| 62805 | 1S752H | Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source | Hitachi Semiconductor |
| 62806 | 1S753H | Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source | Hitachi Semiconductor |
| 62807 | 1S754H | Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source | Hitachi Semiconductor |
| 62808 | 1S755H | Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source | Hitachi Semiconductor |
| 62809 | 1S756H | Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source | Hitachi Semiconductor |
| 62810 | 1S757H | Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source | Hitachi Semiconductor |
| 62811 | 1S758H | Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source | Hitachi Semiconductor |
| 62812 | 1S759H | Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source | Hitachi Semiconductor |
| 62813 | 1S760H | Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source | Hitachi Semiconductor |
| 62814 | 1S761H | Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source | Hitachi Semiconductor |
| 62815 | 1S762H | Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source | Hitachi Semiconductor |
| 62816 | 1S763H | Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source | Hitachi Semiconductor |
| 62817 | 1S764H | Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source | Hitachi Semiconductor |
| 62818 | 1S765H | Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source | Hitachi Semiconductor |
| 62819 | 1S77 | Germanium Gold Bond for TV Horizontal Deflection Oscillator stage damper | Hitachi Semiconductor |
|
| 62820 | 1S770 | Mobile alternator diode | TOSHIBA |
| 62821 | 1S770R | Mobile alternator diode | TOSHIBA |
| 62822 | 1S777 | Germanium rectifier - Tr TV Damper | TOSHIBA |
| 62823 | 1S77H | Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching | Hitachi Semiconductor |
| 62824 | 1S78H | Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching | Hitachi Semiconductor |
| 62825 | 1S79H | Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching | Hitachi Semiconductor |
| 62826 | 1S8 | TECHNICAL SPECIFICTIONS OF SCHOTTKY BARRIER RECTIFIER | DC Components |
| 62827 | 1S8 | 1 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere) | Panjit International Inc |
| 62828 | 1S80 | Germanium Point Contact Diode, intended for use as a General Detector | Hitachi Semiconductor |
| 62829 | 1S80 | 1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts | Micro Commercial Components |
| 62830 | 1S80 | Schottky Diode | Rectron Semiconductor |
| 62831 | 1S81 | General-purpose detector diode | TOSHIBA |
| 62832 | 1S82 | General-purpose detector diode | TOSHIBA |
| 62833 | 1S84 | Silicon Diffused Rectifier | Hitachi Semiconductor |
| 62834 | 1S84H | Silicon Diffused for High Voltage Switching | Hitachi Semiconductor |
| 62835 | 1S85 | Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance | Hitachi Semiconductor |
| 62836 | 1S85H | Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance | Hitachi Semiconductor |
| 62837 | 1S86 | Variable capacitance diode | TOSHIBA |
| 62838 | 1S87 | General-purpose switching diode | TOSHIBA |
| 62839 | 1S88 | General-purpose switching diode | TOSHIBA |
| 62840 | 1S89 | General-purpose switching diode | TOSHIBA |
