| 62761 | 1S312 | Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source | Hitachi Semiconductor |
| 62762 | 1S312H | Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source | Hitachi Semiconductor |
| 62763 | 1S313 | Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source | Hitachi Semiconductor |
| 62764 | 1S313H | Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source | Hitachi Semiconductor |
| 62765 | 1S314 | Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source | Hitachi Semiconductor |
| 62766 | 1S314H | Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source | Hitachi Semiconductor |
| 62767 | 1S315 | Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source | Hitachi Semiconductor |
| 62768 | 1S315H | Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source | Hitachi Semiconductor |
| 62769 | 1S32 | General-purpose detector diode | TOSHIBA |
| 62770 | 1S32 | Germanium point contact diode | TOSHIBA |
| 62771 | 1S324 | General-purpose switching diode | TOSHIBA |
| 62772 | 1S325 | General-purpose switching diode | TOSHIBA |
| 62773 | 1S33 | General-purpose detector diode | TOSHIBA |
| 62774 | 1S33 | Germanium point contact diode | TOSHIBA |
| 62775 | 1S34 | General-purpose detector diode | TOSHIBA |
| 62776 | 1S34 | Germanium point contact diode | TOSHIBA |
| 62777 | 1S35 | General-purpose detector diode | TOSHIBA |
| 62778 | 1S4 | TECHNICAL SPECIFICTIONS OF SCHOTTKY BARRIER RECTIFIER | DC Components |
| 62779 | 1S4 | 1 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere) | Panjit International Inc |
|
| 62780 | 1S40 | 1.0 AMP SCHOTTKY BARRIER RECTIFIERS | Formosa MS |
| 62781 | 1S40 | 1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts | Micro Commercial Components |
| 62782 | 1S40 | SCHOTTKY BARRIER RECTIFIER | Rectron Semiconductor |
| 62783 | 1S48 | Variable capacitance diode | TOSHIBA |
| 62784 | 1S49 | Variable capacitance diode | TOSHIBA |
| 62785 | 1S5 | 1 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere) | Panjit International Inc |
| 62786 | 1S50 | 1.0 AMP SCHOTTKY BARRIER RECTIFIERS | Formosa MS |
| 62787 | 1S50 | 1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts | Micro Commercial Components |
| 62788 | 1S50 | SCHOTTKY BARRIER RECTIFIER | Rectron Semiconductor |
| 62789 | 1S50 | General-purpose detector diode | TOSHIBA |
| 62790 | 1S58 | General-purpose detector diode | TOSHIBA |
| 62791 | 1S6 | TECHNICAL SPECIFICTIONS OF SCHOTTKY BARRIER RECTIFIER | DC Components |
| 62792 | 1S6 | 1 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere) | Panjit International Inc |
| 62793 | 1S60 | 1.0 AMP SCHOTTKY BARRIER RECTIFIERS | Formosa MS |
| 62794 | 1S60 | 1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts | Micro Commercial Components |
| 62795 | 1S60 | SCHOTTKY BARRIER RECTIFIER | Rectron Semiconductor |
| 62796 | 1S689 | Germanium Alloyed Junction Diode, VR(peak) -200V, intended for use in TV Horizontal Deflection Dampar | Hitachi Semiconductor |
| 62797 | 1S689A | Germanium Alloyed Junction Diode, VR(peak) -270V, intended for use in TV Horizontal Deflection Dampar | Hitachi Semiconductor |
| 62798 | 1S71 | General-purpose detector diode | TOSHIBA |
| 62799 | 1S72 | General-purpose detector diode | TOSHIBA |
| 62800 | 1S73 | General-purpose switching diode | TOSHIBA |
