304121 | BCR48PN | NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) | Siemens |
304122 | BCR5 | MEDIUM POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE | Mitsubishi Electric Corporation |
304123 | BCR503 | Digital Transistors - R1=2.2 kOhm; R2=2.2 kOhm | Infineon |
304124 | BCR503 | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, drive circuit) | Siemens |
304125 | BCR505 | Digital Transistors - R1=2.2 kOhm; R2=10 kOhm | Infineon |
304126 | BCR505 | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) | Siemens |
304127 | BCR512 | Digital Transistors - R1=4.7 kOHm; R2=4.7 kOhm | Infineon |
304128 | BCR512 | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, drive circuit) | Siemens |
304129 | BCR519 | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) | Siemens |
304130 | BCR521 | Digital Transistors - R1=1 kOHm; R2=1 kOhm | Infineon |
304131 | BCR521 | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) | Siemens |
304132 | BCR523 | Digital Transistors - R1=1 kOhm; R2=10 kOhm | Infineon |
304133 | BCR523 | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) | Siemens |
304134 | BCR533 | Digital Transistors - R1=10 kOhm; R2=10 kOhm | Infineon |
304135 | BCR533 | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) | Siemens |
304136 | BCR553 | Digital Transistors - PNP Silicon Digital Transistor | Infineon |
304137 | BCR553 | PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) | Siemens |
304138 | BCR555 | Digital Transistors - PNP Silicon Digital Transistor | Infineon |
304139 | BCR555 | PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) | Siemens |
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304140 | BCR562 | Digital Transistors - PNP Silicon Digital Transistor | Infineon |
304141 | BCR562 | PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) | Siemens |
304142 | BCR569 | Digital Transistors - PNP Silicon Digital Transistor | Infineon |
304143 | BCR569 | PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) | Siemens |
304144 | BCR571 | Digital Transistors - PNP Silicon Digital Transistor | Infineon |
304145 | BCR571 | PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) | Siemens |
304146 | BCR573 | Digital Transistors - PNP Silicon Digital Transistor | Infineon |
304147 | BCR573 | PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) | Siemens |
304148 | BCR583 | Digital Transistors - PNP Silicon Digital Transistor | Infineon |
304149 | BCR583 | PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) | Siemens |
304150 | BCR5AM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Corporation |
304151 | BCR5AM | Triac 5 Amperes/400-600 Volts | Powerex Power Semiconductors |
304152 | BCR5AM-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
304153 | BCR5AM-12 | Triac 5 Amperes/400-600 Volts | Powerex Power Semiconductors |
304154 | BCR5AM-12L | Triac 5 Amperes/400-600 Volts | Powerex Power Semiconductors |
304155 | BCR5AM-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
304156 | BCR5AM-8 | Triac 5 Amperes/400-600 Volts | Powerex Power Semiconductors |
304157 | BCR5AM-8L | Triac 5 Amperes/400-600 Volts | Powerex Power Semiconductors |
304158 | BCR5AS | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Corporation |
304159 | BCR5AS | Surface Mount Triac 5 Amperes/400-600 Volts | Powerex Power Semiconductors |
304160 | BCR5AS-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |