304081 | BCR35 | NPN/PNP Silicon Digital Tansistor Array (Switching circuit/ inverter/ interface circuit/ drive circuit) | Siemens |
304082 | BCR35PN | Digital Transistors - SOT363 package | Infineon |
304083 | BCR35PN | NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) | Siemens |
304084 | BCR39 | NPN/PNP Silicon Digital Transistor Array | Infineon |
304085 | BCR39PN | NPN/PNP Silicon Digital Transistor Array | Infineon |
304086 | BCR3AM | MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Corporation |
304087 | BCR3AM | Triac 3 Amperes/400-600 Volts | Powerex Power Semiconductors |
304088 | BCR3AM-12 | Triac 3 Amperes/400-600 Volts | Powerex Power Semiconductors |
304089 | BCR3AM-8 | Triac 3 Amperes/400-600 Volts | Powerex Power Semiconductors |
304090 | BCR3AS | MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Corporation |
304091 | BCR3AS | LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Powerex Power Semiconductors |
304092 | BCR3AS-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
304093 | BCR3AS-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
304094 | BCR3KM | MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Corporation |
304095 | BCR3KM-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
304096 | BCR3KM-14 | MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Corporation |
304097 | BCR3KM-14 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
304098 | BCR3KM-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
304099 | BCR3PM | MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Corporation |
|
304100 | BCR3PM-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
304101 | BCR3PM-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
304102 | BCR400 | Application Considerations for the Integrated Bias Control Circuits | Infineon |
304103 | BCR400R | Active Bias Controller (AF SSIC) | Infineon |
304104 | BCR400R | Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) | Siemens |
304105 | BCR400W | Analog Silicon SSICs - Low voltage drop of 0.7V | Infineon |
304106 | BCR400W | Active Bias Controller (AF SSIC) | Infineon |
304107 | BCR400W | Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) | Siemens |
304108 | BCR401 | LED Driver(Supplies stable bias current even at low battery voltage) | Infineon |
304109 | BCR401R | Analog Silicon SSICs - output current: 10..60mA | Infineon |
304110 | BCR402 | Light Emitting Diode (LED) Driver IC Provides Constant LED Current Independent of Supply Voltage Variation | Infineon |
304111 | BCR402R | Analog Silicon SSICs - output current: 20..60mA | Infineon |
304112 | BCR402U | Analog Silicon SSICs - LED Driver in SC74 | Infineon |
304113 | BCR405U | SSIC Constant Current Sources for driving LEDs | Infineon |
304114 | BCR410 | Active Bias Controller | Infineon |
304115 | BCR410W | Analog Silicon SSICs - Ultra low voltage drop of 0.1V | Infineon |
304116 | BCR42 | NPN/PNP Silicon Digital Transistor Array | Infineon |
304117 | BCR42PN | Digital Transistors - SOT363 package | Infineon |
304118 | BCR48 | NPN/PNP Silicon Digital Transistor Array | Infineon |
304119 | BCR48 | NPN/PNP Silicon Digital Tansistor Array (Switching circuit/ inverter/ interface circuit/ drive circuit) | Siemens |
304120 | BCR48PN | Digital Transistors - SOT363 package | Infineon |