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Datasheets found :: 1726161
Page: << | 7598 | 7599 | 7600 | 7601 | 7602 | 7603 | 7604 | 7605 | 7606 | 7607 | 7608 | >>
No.Part NameDescriptionManufacturer
304081BCR35NPN/PNP Silicon Digital Tansistor Array (Switching circuit/ inverter/ interface circuit/ drive circuit)Siemens
304082BCR35PNDigital Transistors - SOT363 packageInfineon
304083BCR35PNNPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)Siemens
304084BCR39NPN/PNP Silicon Digital Transistor ArrayInfineon
304085BCR39PNNPN/PNP Silicon Digital Transistor ArrayInfineon
304086BCR3AMMITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
304087BCR3AMTriac 3 Amperes/400-600 VoltsPowerex Power Semiconductors
304088BCR3AM-12Triac 3 Amperes/400-600 VoltsPowerex Power Semiconductors
304089BCR3AM-8Triac 3 Amperes/400-600 VoltsPowerex Power Semiconductors
304090BCR3ASMITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
304091BCR3ASLOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEPowerex Power Semiconductors
304092BCR3AS-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
304093BCR3AS-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
304094BCR3KMMITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
304095BCR3KM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
304096BCR3KM-14MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
304097BCR3KM-14Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
304098BCR3KM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
304099BCR3PMMITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation


304100BCR3PM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
304101BCR3PM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
304102BCR400Application Considerations for the Integrated Bias Control CircuitsInfineon
304103BCR400RActive Bias Controller (AF SSIC)Infineon
304104BCR400RActive Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation)Siemens
304105BCR400WAnalog Silicon SSICs - Low voltage drop of 0.7VInfineon
304106BCR400WActive Bias Controller (AF SSIC)Infineon
304107BCR400WActive Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation)Siemens
304108BCR401LED Driver(Supplies stable bias current even at low battery voltage)Infineon
304109BCR401RAnalog Silicon SSICs - output current: 10..60mAInfineon
304110BCR402Light Emitting Diode (LED) Driver IC Provides Constant LED Current Independent of Supply Voltage VariationInfineon
304111BCR402RAnalog Silicon SSICs - output current: 20..60mAInfineon
304112BCR402UAnalog Silicon SSICs - LED Driver in SC74Infineon
304113BCR405USSIC Constant Current Sources for driving LEDsInfineon
304114BCR410Active Bias ControllerInfineon
304115BCR410WAnalog Silicon SSICs - Ultra low voltage drop of 0.1VInfineon
304116BCR42NPN/PNP Silicon Digital Transistor ArrayInfineon
304117BCR42PNDigital Transistors - SOT363 packageInfineon
304118BCR48NPN/PNP Silicon Digital Transistor ArrayInfineon
304119BCR48NPN/PNP Silicon Digital Tansistor Array (Switching circuit/ inverter/ interface circuit/ drive circuit)Siemens
304120BCR48PNDigital Transistors - SOT363 packageInfineon


Datasheets found :: 1726161
Page: << | 7598 | 7599 | 7600 | 7601 | 7602 | 7603 | 7604 | 7605 | 7606 | 7607 | 7608 | >>


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