TOSHIBA
Datasheet Catalog - Page 181
| Datasheets found :: 18004 | Page: | 176 | 177 | 178 | 179 | 180 | 181 | |
No. | Part Name | Description |
18001 | VG-239 | Heat Sink |
18002 | VR4J | TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery) |
18003 | VR4N | TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery) |
18004 | YTFP250 | V(dsx): 200V; V(dgr): 200V; V(gss): 20V; 150W; silicon N-channel MOS type field effect effect transistor. For high speed, high current switching applications |
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