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SGS Thomson Microelectronics

Datasheet Catalog - Page 2

Datasheets found :: 26022Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |
No.Part NameDescription
1011N582XLOW DROP POWER SCHOTTKY RECTIFIER
1021N5908TRANSIL
1031N5908TRANSIL
1041N6263SMALL SIGNAL SCHOTTKY DIODE
1051N6263SMALL SIGNAL SCHOTTKY DIODE
10620012GHz 1W 28V NPN microwave power transistor for Class C applications
10720032GHz 3W 28V NPN microwave power transistor for Class C applications
10820052GHz 5W 28V NPN microwave power transistor for Class C applications
10920102GHz 10W 28V NPN microwave power transistor for Class C applications
1102023-1Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications
1112023-162.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications
1122023-3Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications


1132023-6Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications
1142023-62.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications
11520L082.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance
11620L152.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance
11721002.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance
1182223-102.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications
1192223-14Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz
1202223-182.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications
1212223-32.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications
12223012.3GHz 1W 22V microwave power transistor for class C applications
12323042.3GHz 4W 20V microwave power transistor for class C applications
1242327-1Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications
1252327-152.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications
1262327-3Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications
1272327-5Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications
12827128NMOS 128K 16K x 8 UV EPROM
12927C10241 Mbit 64Kb x16 UV EPROM and OTP EPROM
13027C16016 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM
13127C40014 Mbit 512Kb x 8 UV EPROM and OTP EPROM
13227C512512 Kbit 64Kb x8 UV EPROM and OTP EPROM
1332931-125High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications
13429F0022 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
13529F0101 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory
13629F0404 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory
1372N1613SWITCHES AND UNIVERSAL AMPLIFIERS
1382N1613SWITCHES AND UNIVERSAL AMPLIFIERS
1392N1711SWITCHES AND UNIVERSAL AMPLIFIERS
1402N1711SWITCHES AND UNIVERSAL AMPLIFIERS
1412N1893GENERAL PURPOSE HIGH-VOLTAGE TYPE
1422N2102GENERAL PURPOSE AMPLIFIER AND SWITCH
1432N2218HIGH-SPEED SWITCHES
1442N2218HIGH-SPEED SWITCHES
1452N2219HIGH-SPEED SWITCHES
1462N2219HIGH-SPEED SWITCHES
1472N2219HIGH SPEED SWITCHES
1482N2219AHIGH SPEED SWITCHES
1492N2219AHIGH SPEED SWITCHES
1502N2221HIGH-SPEED SWITCHES
1512N2221HIGH-SPEED SWITCHES
1522N2222HIGH-SPEED SWITCHES
1532N2222HIGH SPEED SWITCHES
1542N2222HIGH-SPEED SWITCHES
1552N2222AHIGH SPEED SWITCHES
1562N2222AHIGH SPEED SWITCHES
1572N2369HIGH-FREQUENCY SATURATED SWITCH
1582N2369AHIGH-SPEED SATURATED SWITCH
1592N2484TRANSISTOR
1602N2894HIGH SPEED SATURATED SWITCHES
1612N2905GENERAL PURPOSE AMPLIFIERS AND SWITCHES
1622N2905GENERAL PURPOSE AMPLIFIERS AND SWITCHES
1632N2905AGENERAL PURPOSE AMPLIFIERS AND SWITCHES
1642N2905AGENERAL PURPOSE AMPLIFIERS AND SWITCHES
1652N2906Ahfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA
1662N2907GENERAL PURPOSE AMPLIFIERS AND SWITCHES
1672N2907GENERAL PURPOSE AMPLIFIERS AND SWITCHES
1682N2907AGENERAL PURPOSE AMPLIFIERS AND SWITCHES
1692N2907AGENERAL PURPOSE AMPLIFIERS AND SWITCHES
1702N3019HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS
1712N3055COMPLEMENTARY SILICON POWER TRANSISTORS
1722N3055COMPLEMENTARY SILICON POWER TRANSISTORS
1732N3209HIGH SPEED SATURATED SWITCHES
1742N3375RF CLASS C wide band NPN transistor
1752N3439SILICON NPN TRANSISTORS
1762N3439SILICON NPN TRANSISTORS
1772N3440SILICON NPN TRANSISTORS
1782N3440SILICON NPN TRANSISTORS
1792N3600HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS
1802N3632RF CLASS C wide band NPN transistor
1812N3700GENERAL PURPOSE AMPLIFIERS
1822N3725HIGH VOLTAGE, HIGH CURRENT SWITCH
1832N3733RF CLASS C wide band NPN transistor
1842N3771HIGH POWER NPN SILICON TRANSISTOR
1852N3771HIGH POWER NPN SILICON TRANSISTOR
1862N3772HIGH POWER NPN SILICON TRANSISTOR
1872N3772HIGH POWER NPN SILICON TRANSISTOR
1882N3904SMALL SIGNAL NPN TRANSISTOR
1892N3904-APSMALL SIGNAL NPN TRANSISTOR
1902N3906SMALL SIGNAL PNP TRANSISTOR
1912N3906-APSMALL SIGNAL PNP TRANSISTOR
1922N3926RF NPN Transistor 130...230MHZ FM mobile applications
1932N3927RF NPN Transistor 130...230MHZ FM mobile applications
1942N4014HIGH-VOLTAGE, HIGH CURRENT SWITCH
1952N4033GENERAL PURPOSE AMPLIFIER AND SWITCH
1962N4036MEDIUM-SPEED SWITCH
1972N4427ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W
1982N4429Microwave Power NPN Transistor for CLASS C applications
1992N4430Microwave Power NPN Transistor for CLASS C applications
2002N4431Microwave Power NPN Transistor for CLASS C applications


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