| 1513 | AM0608-070 | Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics |
| 1514 | AM0608-200 | AVIONICS APPLICATIONS, RF & MICROWAVE TRANSISTORS |
| 1515 | AM0608-450 | AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 1516 | AM0710-300 | High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
| 1517 | AM0912-080 | AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 1518 | AM0912-150 | AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 1519 | AM0912-300 | AVIONICS APPLICATIONS, RF & MICROWAVE TRANSISTORS |
| 1520 | AM0912-350 | Avionics power RF transistor |
| 1521 | AM1011-050 | High Power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications |
| 1522 | AM1011-055 | High Power Class C transistor, designed for L-Band Avionics transponder/interrogator output and driver applications |
| 1523 | AM1011-060 | High power Class C transistor designed for L-Band Avionics transponder/interrogator pulsed output |
| 1524 | AM1011-070 | RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS |
| 1525 | AM1011-075 | L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 1526 | AM1011-175 | High power Class C transistor |
| 1527 | AM1011-225 | High power Class C transistor designed for L-Band Avionics applications |
| 1528 | AM1011-300 | RF & MICROWAVE TRANSISTORS, AVIONICS APPLICATIONS |
| 1529 | AM1011-350 | High power Class C transistor designed for L-Band Avionics Mode-S transponder/interrogator applications |
| 1530 | AM1011-400 | L-BAND AVIONICS APPLICATIONS, RF & MICROWAVE TRANSISTORS |
| 1531 | AM1011-500 | RF & MICROWAVE TRANSISTORS, AVIONICS APPLICATIONS |
| 1532 | AM1214-100 | L-BAND RADAR APPLICATIONS, RF & MICROWAVE TRANSISTORS |
| 1533 | AM1214-130 | RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS |
| 1534 | AM1214-175 | L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 1535 | AM1214-200 | L-BAND RADAR APPLICATIONS, RF & MICROWAVE TRANSISTORS |
| 1536 | AM1214-250 | RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS |
| 1537 | AM1214-300 | L-BAND RADAR APPLICATIONS, RF & MICROWAVE TRANSISTORS |
| 1538 | AM1214-325 | L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 1539 | AM1416-001 | Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
| 1540 | AM1416-003 | Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
| 1541 | AM1416-100 | High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
| 1542 | AM1416-200 | High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
| 1543 | AM1517-012 | SATELLITE COMMUNICATIONS APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 1544 | AM1517-025 | RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS |
| 1545 | AM1517-035 | High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems |
| 1546 | AM1616-050 | High power Class C, CW transistor designed for 1.6GHz satellite communications applications including GPS and INMARSAT |
| 1547 | AM2023-001 | Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
| 1548 | AM2023-003 | Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
| 1549 | AM2023-006 | Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
| 1550 | AM2327-001 | Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
| 1551 | AM2327-003 | Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
| 1552 | AM2327-005 | Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
| 1553 | AM2729-110 | S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 1554 | AM2729-125 | RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS |
| 1555 | AM2931-110 | S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 1556 | AM2931-125 | High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
| 1557 | AM3135-007 | High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
| 1558 | AM3135-014 | High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
| 1559 | AM3135-025 | High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
| 1560 | AM3135-035 | High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
| 1561 | AM3135-045 | High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
| 1562 | AM3135-25N | High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
| 1563 | AM80610-018 | High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz |
| 1564 | AM80610-030 | RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS |
| 1565 | AM80610-050 | High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz |
| 1566 | AM80814-005 | L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 1567 | AM80814-025 | L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 1568 | AM80912-005 | AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 1569 | AM80912-015 | AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 1570 | AM80912-030 | SPECIALITY AVIONICS/JTIDS APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 1571 | AM80912-085 | AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 1572 | AM80912-085 | AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 1573 | AM81214-006 | RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS |
| 1574 | AM81214-015 | L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 1575 | AM81214-030 | L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 1576 | AM81214-060 | L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 1577 | AM81416-006 | Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
| 1578 | AM81416-012 | Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
| 1579 | AM81416-020 | Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
| 1580 | AM81719-030 | TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 1581 | AM81719-040 | RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS |
| 1582 | AM81720-012 | COMMUNICATIONS APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 1583 | AM81720-020 | Transistor for communications applications |
| 1584 | AM81922-018 | Transistor for communications applications |
| 1585 | AM82022-020 | Common base NPN silicon power transistor for telemetry applications |
| 1586 | AM82023-010 | Transistor designed specifically for Telemetry and Communications applications |
| 1587 | AM82023-016 | Transistor designed specifically for Telemetry and Communications applications |
| 1588 | AM82223-004 | Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
| 1589 | AM82223-010 | TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 1590 | AM82223-012 | Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
| 1591 | AM82223-014 | Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
| 1592 | AM82223-018 | Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
| 1593 | AM82223-020 | Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
| 1594 | AM82324-020 | Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
| 1595 | AM82325-040 | High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz |
| 1596 | AM82327-004 | Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
| 1597 | AM82327-006 | Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
| 1598 | AM82327-010 | Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
| 1599 | AM82327-015 | Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
| 1600 | AM82729-030 | High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
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