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Mitsubishi Electric Corporation

Datasheet Catalog - Page 6

Datasheets found :: 36747Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |
No.Part NameDescription
501CM800E2Z-66HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
502CM800HA-24HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
503CM800HA-24HIGBT Modules:1200V
504CM800HA-34HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
505CM800HA-50HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
506CM800HA-66HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
507CM800HB-50HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
508CM800HB-66HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
509CM900HB-90HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
510CR02LOW POWER USE PLANAR PASSIVATION TYPE
511CR02AMMITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE PLANAR PASSIVATION TYPE
512CR02AM-4Integrated Gate Bipolar Transistor (IGBT) Modules: 250V


513CR02AM-6Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
514CR02AM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
515CR02AM-8AMITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE GLASS PASSIVATION TYPE
516CR03AMMITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
517CR03AM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
518CR03AM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
519CR04LOW POWER USE GLASS PASSIVATION TYPE
520CR04AMMITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE GLASS PASSIVATION TYPE
521CR04AM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
522CR04AM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
523CR05ASMITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
524CR05AS-4Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
525CR05AS-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
526CR08ASMITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
527CR08AS-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
528CR08AS-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
529CR10CMEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
530CR10CYHIGH-SPEED SWITCHING THYRISTOR - MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
531CR12AMMITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
532CR12AM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
533CR12AM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
534CR12BMMITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
535CR20EYHIGH-SPEED SWITCHING THYRISTOR - MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
536CR20FMITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
537CR2AMMITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
538CR2AM-8ALOW POWER USE GLASS PASSIVATION TYPE
539CR3AMZHIGH-SPEED SWITCHING THYRISTOR - LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
540CR3EMMITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
541CR3JMHIGH-SPEED SWITCHING THYRISTOR - LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
542CR3JMIntegrated Gate Bipolar Transistor (IGBT) Modules: 250V
543CR3PMMITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
544CR3PM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
545CR3PM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
546CR5ASMITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
547CR5AS-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
548CR5AS-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
549CR6CMMITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
550CR6CM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
551CR6CM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
552CR6PMMITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
553CR6PM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
554CR6PM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
555CR8AMMITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
556CR8AM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
557CR8AM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
558CR8PMMITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
559CR8PM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
560CR8PM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
561CT15SM-24MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR GENERAL INVERTER ò UPS USE
562CT20AS-8MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
563CT20ASJ-8MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
564CT20ASL-8MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
565CT20TM-8MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
566CT20VM-8MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
567CT20VML-8MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
568CT20VS-8MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
569CT20VSL-8MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
570CT25AS-8MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
571CT25ASJ-8MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
572CT30SM-1Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
573CT30SM-12MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR GENERAL INVERTER ò UPS USE
574CT30TM-8MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
575CT30VM-8MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
576CT30VS-8MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
577CT35SM-8MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
578CT40TMH-8MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
579CT60AM-18BIntegrated Gate Bipolar Transistor (IGBT) Modules: 250V
580CT60AM-18BMITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR RESONANT INVERTER USE
581CT60AM-18FIntegrated Gate Bipolar Transistor (IGBT) Modules: 250V
582CT75AM-12MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR GENERAL INVERTER ò UPS USE
583CT90AM-18Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
584CY20AAJ-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
585CY20AAJ-8FIntegrated Gate Bipolar Transistor (IGBT) Modules: 250V
586CY25AAJ-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
587CY25AAJ-8FIntegrated Gate Bipolar Transistor (IGBT) Modules: 250V
588D-1D1 Outline Drawings
589D-10D10 Outline Drawings
590D-11D11 Outline Drawings
591D-2D2 Outline Drawings
592D-3D3 Outline Drawings
593D-4D4 Outline Drawings
594D-6D6 Outline Drawings
595D-7D7 Outline Drawings
596D-8D8 Outline Drawings
597D-9D9 Outline Drawings
598DN1811LSI for 16 CH Multiplexing
599E602204_HD64413ASuperH RISC engine Peripheral LSI
600E702196_SH7750Hitachi Microcomputer Development Environment System SH7750 E10A Emulator


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