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Mitsubishi Electric Corporation

Datasheet Catalog - Page 3

Datasheets found :: 36747Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No.Part NameDescription
201BCR6AMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
202BCR6AM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
203BCR6AM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
204BCR8MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
205BCR8CMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
206BCR8CM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
207BCR8CM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
208BCR8CSMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
209BCR8CS-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
210BCR8CS-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
211BCR8PMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
212BCR8PM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V


213BCR8PM-14Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
214BCR8PM-14MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
215BCR8PM-16Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
216BCR8PM-18MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
217BCR8PM-20Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
218BCR8PM-20MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
219BCR8PM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
220BCR8UMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
221CM1000DU-34NFHIGH POWER SWITCHING USE
222CM1000HA-24HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
223CM1000HA-24HIGBT Modules:1200V
224CM1000HA-28HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
225CM100BU-12HIGBT Modules: 600V
226CM100BU-12HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
227CM100DU-12FIGBT Modules: 600V
228CM100DU-12HIGBT Modules: 600V
229CM100DU-12HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
230CM100DU-24FIGBT Modules:1200V
231CM100DU-24HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
232CM100DU-24HIGBT Modules:1200V
233CM100DU-24NFHMITSUBISHI IGBT MODULES
234CM100DU-34KAIGBT Modules:1700V
235CM100DUS-12FHIGH POWER SWITCHING USE
236CM100DYHIGH POWER SWITCHING USE
237CM100DY-12HHIGH POWER SWITCHING USE INSULATED TYPE IGBT MODULES
238CM100DY-12HIGBT Modules: 600V
239CM100DY-24HIGBT Modules:1200V
240CM100DY-24HHIGH POWER SWITCHING USE INSULATED TYPE IGBT MODULES
241CM100DY-24NFHIGH POWER SWITCHING USE
242CM100E3U-12FIGBT Modules: 600V
243CM100E3U-12HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
244CM100E3U-12HIGBT Modules: 600V
245CM100E3U-24FIGBT Modules:1200V
246CM100E3U-24HIGBT Modules:1200V
247CM100E3U-24HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
248CM100HA-28HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
249CM100TF-12HIGBT Modules: 600V
250CM100TF-12HMITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
251CM100TF-24HIGH POWER SWITCHING USE INSULATED TYPE
252CM100TF-24HIGBT Modules:1200V
253CM100TF-24HMITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
254CM100TF-28HMITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
255CM100TF-28HIGBT Modules:1400V
256CM100TU-12FMITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE
257CM100TU-12FIGBT Modules: 600V
258CM100TU-12HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
259CM100TU-12HIGBT Modules: 600V
260CM100TU-24FMITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE
261CM100TU-24FIGBT Modules:1200V
262CM100TU-24HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
263CM100TU-24HIGBT Modules:1200V
264CM10AD00-24HConverter Inverter Brake Modules:1200V
265CM10AD05-12HCIB Modules: 600V
266CM10MD-12HMITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
267CM10MD-24HMITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
268CM10MD1-12HMITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
269CM10MD3-12HMITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
270CM1200HA-34HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
271CM1200HA-50HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
272CM1200HA-66HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
273CM1200HB-50HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
274CM1200HB-66HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
275CM1200HC-66HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
276CM150DU-12FIGBT Modules: 600V
277CM150DU-12HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
278CM150DU-12HIGBT Modules: 600V
279CM150DU-24FMITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE
280CM150DU-24FIGBT Modules:1200V
281CM150DU-24HIGBT Modules:1200V
282CM150DU-24HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
283CM150DU-34KAIGBT Modules:1700V
284CM150DY-12HIGBT Modules: 600V
285CM150DY-12HHIGH POWER SWITCHING USE INSULATED TYPE IGBT MODULES
286CM150DY-12NFHIGH POWER SWITCHING USE
287CM150DY-24HIGBT Modules:1200V
288CM150DY-24HMITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
289CM150E3U-12FIGBT Modules: 600V
290CM150E3U-12HIGBT Modules: 600V
291CM150E3U-12HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
292CM150E3U-24FIGBT Modules:1200V
293CM150E3U-24HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
294CM150E3U-24HIGBT Modules:1200V
295CM150TF-12HIGBT Modules: 600V
296CM150TF-12HMITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
297CM150TU-12FIGBT Modules: 600V
298CM150TU-12FMITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE
299CM150TU-12HIGBT Modules: 600V
300CM150TU-12HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE


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