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Mitsubishi Electric Corporation

Datasheet Catalog - Page 2

Datasheets found :: 36747Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |
No.Part NameDescription
10174273OCTAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP FLOP WITH RESET
10274LSOCTAL BUFFER/LINE DRIVERS WITH 3-STATE OUTPUT(NONINVERTED)
10374LS244OCTAL BUFFER/LINE DRIVERS WITH 3-STATE OUTPUT(NONINVERTED)
10474LS273OCTAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP FLOP WITH RESET
1057531 GROUPSingle Chip 8-Bit CMOS Microcomputer
1067531 GROUPSINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
107BA01202GaAs HBT HYBRID IC
108BA01203GaAs HBT HYBRID IC
109BA01207GaAs HBT HYBRID IC
110BCR08AM-14Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
111BCR08AM-14MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE
112BCR08AS-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V


113BCR08AS-8MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
114BCR10CMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
115BCR10CM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
116BCR10CM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
117BCR10CSMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
118BCR10CSIntegrated Gate Bipolar Transistor (IGBT) Modules: 250V
119BCR10PMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
120BCR10PMIntegrated Gate Bipolar Transistor (IGBT) Modules: 250V
121BCR10UMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
122BCR12MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
123BCR12CMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
124BCR12CM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
125BCR12CM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
126BCR12CSMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
127BCR12CS-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
128BCR12CS-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
129BCR12KM-14MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
130BCR12PMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
131BCR12PM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
132BCR12PM-14MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
133BCR12PM-14Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
134BCR12PM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
135BCR12UMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
136BCR16AMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE
137BCR16BMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE
138BCR16CMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE
139BCR16CMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
140BCR16CMIntegrated Gate Bipolar Transistor (IGBT) Modules: 250V
141BCR16CSMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
142BCR16CSIntegrated Gate Bipolar Transistor (IGBT) Modules: 250V
143BCR16EMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE
144BCR16HMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
145BCR16PMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
146BCR16PM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
147BCR16PM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
148BCR16UMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
149BCR1AM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
150BCR1AM-12MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE GLASS PASSIVATION TYPE
151BCR1AM-8MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE
152BCR20AMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE
153BCR20AMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
154BCR20AM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
155BCR20AM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
156BCR20BMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE
157BCR20B-10Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
158BCR20B-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
159BCR20CMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE
160BCR20C-10Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
161BCR20C-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
162BCR20EMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE
163BCR20KMIntegrated Gate Bipolar Transistor (IGBT) Modules: 250V
164BCR25AMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
165BCR25BMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
166BCR2PMMITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
167BCR2PM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
168BCR2PM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
169BCR3LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE
170BCR30MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE
171BCR30AMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
172BCR30AM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
173BCR30AM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
174BCR30GMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
175BCR3AMMITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
176BCR3ASMITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
177BCR3AS-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
178BCR3AS-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
179BCR3KMMITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
180BCR3KM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
181BCR3KM-14MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
182BCR3KM-14Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
183BCR3KM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
184BCR3PMMITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
185BCR3PM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
186BCR3PM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
187BCR5MEDIUM POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE
188BCR5AMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
189BCR5AM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
190BCR5AM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
191BCR5ASMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
192BCR5AS-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
193BCR5AS-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
194BCR5KMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
195BCR5KMIntegrated Gate Bipolar Transistor (IGBT) Modules: 250V
196BCR5PMMITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
197BCR5PM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
198BCR5PM-14Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
199BCR5PM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
200BCR6MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE


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