Nr. | Part Name | Description | Manufacturer |
201 | M57160AL | IGBT MODULE HYBRID IC | Isahaya Electronics Corporation |
202 | M57182N-315 | UNINSULATED DC-DC CONVERTER | Isahaya Electronics Corporation |
203 | M57182N-416 | Hybrid IC. Uninsulated DC-DC converter. Input voltage range DC 180V-450V. Output specifications 16V, 300mA. | Isahaya Electronics Corporation |
204 | M57183N-316 | Hybrid IC. Uninsulated DC-DC converter. Input voltage range DC 110V-180V. Output specifications 15V, 100mA; 5V, 350mA. | Isahaya Electronics Corporation |
205 | M57184N-715A | Hybrid IC. Uninsulated DC-DC converter. Input voltage range DC 220V-360V. Output specifications 15V, 350mA; 5V, 200mA. | Isahaya Electronics Corporation |
206 | M57959AL-01 | IGBT MODULE GATE HYBRID IC | Isahaya Electronics Corporation |
207 | M57962AL | LGBT IC | Isahaya Electronics Corporation |
208 | M57962AL-01 | LGBT IC | Isahaya Electronics Corporation |
209 | MC2831 | Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. | Isahaya Electronics Corporation |
210 | MC2832 | Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. | Isahaya Electronics Corporation |
211 | MC2833 | Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. | Isahaya Electronics Corporation |
212 | MC2834 | Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. | Isahaya Electronics Corporation |
213 | MC2835 | Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. | Isahaya Electronics Corporation |
214 | MC2836 | Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 75 V. | Isahaya Electronics Corporation |
215 | MC2837 | Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. | Isahaya Electronics Corporation |
216 | MC2838 | Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. | Isahaya Electronics Corporation |
217 | MC2839 | Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. | Isahaya Electronics Corporation |
218 | MC2840 | Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. | Isahaya Electronics Corporation |
219 | MC2841 | FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE | Isahaya Electronics Corporation |
220 | MC2841 | FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE | Isahaya Electronics Corporation |
221 | MC2842 | MC2842 | Isahaya Electronics Corporation |
222 | MC2842 | MC2842 | Isahaya Electronics Corporation |
223 | MC2843 | MC2843 | Isahaya Electronics Corporation |
224 | MC2843 | MC2843 | Isahaya Electronics Corporation |
225 | MC2844 | Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. | Isahaya Electronics Corporation |
226 | MC2845 | Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 35 V. | Isahaya Electronics Corporation |
227 | MC2846 | Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. | Isahaya Electronics Corporation |
228 | MC2848 | FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE | Isahaya Electronics Corporation |
229 | MC2848 | FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE | Isahaya Electronics Corporation |
230 | MC2850 | Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. | Isahaya Electronics Corporation |
231 | MC2852 | Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. | Isahaya Electronics Corporation |
232 | MC2854 | Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. | Isahaya Electronics Corporation |
233 | MC961 | Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. | Isahaya Electronics Corporation |
234 | MC971 | For High Speed Swiching Application Silicon Epitaxial Type(Common Cathode) | Isahaya Electronics Corporation |
235 | MC971 | For High Speed Swiching Application Silicon Epitaxial Type(Common Cathode) | Isahaya Electronics Corporation |
236 | MC981 | Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. | Isahaya Electronics Corporation |
237 | MC982 | Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 35 V. | Isahaya Electronics Corporation |
238 | RT1N137L | Transistor with resistor for switching application. Silicon NPN epitaxial type. | Isahaya Electronics Corporation |
239 | RT1N137P | Transistor with resistor for switching application. Silicon NPN epitaxial type. | Isahaya Electronics Corporation |
240 | RT1N141C | Transistor with resistor for switching application. Silicon NPN epitaxial type. | Isahaya Electronics Corporation |
241 | RT1N141M | Transistor with resistor for switching application. Silicon NPN epitaxial type. | Isahaya Electronics Corporation |
242 | RT1N141S | Transistor with resistor for switching application. Silicon NPN epitaxial type. | Isahaya Electronics Corporation |
243 | RT1N141T | Transistor with resistor for switching application. Silicon NPN epitaxial type. | Isahaya Electronics Corporation |
244 | RT1N141U | Transistor with resistor for switching application. Silicon NPN epitaxial type. | Isahaya Electronics Corporation |
245 | RT1N431C | Transistor with resistor for switching application. Silicon NPN epitaxial type. | Isahaya Electronics Corporation |
246 | RT1N431M | Transistor with resistor for switching application. Silicon NPN epitaxial type. | Isahaya Electronics Corporation |
247 | RT1N431S | Transistor with resistor for switching application. Silicon NPN epitaxial type. | Isahaya Electronics Corporation |
248 | RT1N431T | Transistor with resistor for switching application. Silicon NPN epitaxial type. | Isahaya Electronics Corporation |
249 | RT1N431U | Transistor with resistor for switching application. Silicon NPN epitaxial type. | Isahaya Electronics Corporation |
250 | RT1P137L | Transistor with resistor for switching application. Silicon PNP epitaxial type. | Isahaya Electronics Corporation |
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