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Hynix Semiconductor

Datasheet Catalog - Page 25

Datasheets found :: 4228Page: | 20 | 21 | 22 | 23 | 24 | 25 | 26 | 27 | 28 | 29 | 30 |
No.Part NameDescription
1201HY51VS17403HGLJ-54,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power
1202HY51VS17403HGLJ-64,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
1203HY51VS17403HGLJ-74,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
1204HY51VS17403HGLT-54,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power
1205HY51VS17403HGLT-64,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
1206HY51VS17403HGLT-74,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
1207HY51VS17403HGT-54,194,304 words x 4 bit EDO RAM, 3.3V, 50ns
1208HY51VS17403HGT-64,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
1209HY51VS17403HGT-74,194,304 words x 4 bit EDO RAM, 3.3V, 70ns
1210HY51VS18163HG1M x 16Bit EDO DRAM
1211HY51VS18163HGJ-5Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns
1212HY51VS18163HGJ-6Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns


1213HY51VS18163HGJ-7Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns
1214HY51VS18163HGLJ-5Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1215HY51VS18163HGLJ-6Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
1216HY51VS18163HGLJ-7Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
1217HY51VS18163HGLT-5Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1218HY51VS18163HGLT-6Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
1219HY51VS18163HGLT-7Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
1220HY51VS18163HGT-5Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns
1221HY51VS18163HGT-6Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns
1222HY51VS18163HGT-7Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns
1223HY51VS65163HG4M x 16Bit EDO DRAM
1224HY51VS65163HGJ-454M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns
1225HY51VS65163HGJ-54M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns
1226HY51VS65163HGJ-64M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns
1227HY51VS65163HGLJ-454M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power
1228HY51VS65163HGLJ-54M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power
1229HY51VS65163HGLJ-64M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power
1230HY51VS65163HGLT-454M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power
1231HY51VS65163HGLT-54M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power
1232HY51VS65163HGLT-64M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power
1233HY51VS65163HGT-454M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns
1234HY51VS65163HGT-54M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns
1235HY51VS65163HGT-64M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns
1236HY534256A256K x 4-bit CMOS DRAM
1237HY534256AJ256K x 4-bit CMOS DRAM
1238HY534256AJ-45256K x 4-bit CMOS DRAM, 45ns
1239HY534256AJ-50256K x 4-bit CMOS DRAM, 50ns
1240HY534256AJ-60256K x 4-bit CMOS DRAM, 60ns
1241HY534256AJ-70256K x 4-bit CMOS DRAM, 70ns
1242HY534256AJ-80256K x 4-bit CMOS DRAM, 80ns
1243HY534256ALJ256K x 4-bit CMOS DRAM
1244HY534256ALJ-45256K x 4-bit CMOS DRAM, 45ns, low power
1245HY534256ALJ-50256K x 4-bit CMOS DRAM, 50ns, low power
1246HY534256ALJ-60256K x 4-bit CMOS DRAM, 60ns, low power
1247HY534256ALJ-70256K x 4-bit CMOS DRAM, 70ns, low power
1248HY534256ALJ-80256K x 4-bit CMOS DRAM, 80ns, low power
1249HY534256ALS256K x 4-bit CMOS DRAM
1250HY534256ALS-60256K x 4-bit CMOS DRAM, 60ns, low power


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