6413 | HM5165165LJ-6 | 64M EDO DRAM (4-Mword x 16-bit), 60ns |
6414 | HM5165165LTT-5 | 64M EDO DRAM (4-Mword x 16-bit), 50ns |
6415 | HM5165165LTT-6 | 64M EDO DRAM (4-Mword x 16-bit), 60ns |
6416 | HM5165165TT-5 | 64M EDO DRAM (4-Mword x 16-bit), 50ns |
6417 | HM5165165TT-6 | 64M EDO DRAM (4-Mword x 16-bit), 60ns |
6418 | HM5165405FJ-5 | 16M x 4-bit EDO DRAM, 50ns |
6419 | HM5165405FJ-6 | 16M x 4-bit EDO DRAM, 60ns |
6420 | HM5165405FLJ-5 | 16M x 4-bit EDO DRAM, 50ns |
6421 | HM5165405FLJ-6 | 16M x 4-bit EDO DRAM, 60ns |
6422 | HM5165405FLTT-5 | 16M x 4-bit EDO DRAM, 50ns |
6423 | HM5165405FLTT-6 | 16M x 4-bit EDO DRAM, 60ns |
6424 | HM5165405FTT-5 | 16M x 4-bit EDO DRAM, 50ns |
6425 | HM5165405FTT-6 | 16M x 4-bit EDO DRAM, 60ns |
6426 | HM51S4260AJ-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÖ random access memory |
6427 | HM51S4260AJ-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiß random access memory |
6428 | HM51S4260AJ-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiú random access memory |
6429 | HM51S4260ALJ-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÐ random access memory |
6430 | HM51S4260ALJ-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÖ random access memory |
6431 | HM51S4260ALJ-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiæ random access memory |
6432 | HM51S4260ALRR-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiú random access memory |
6433 | HM51S4260ALRR-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiæ random access memory |
6434 | HM51S4260ALRR-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÖ random access memory |
6435 | HM51S4260ALTT-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiß random access memory |
6436 | HM51S4260ALTT-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÈ random access memory |
6437 | HM51S4260ALTT-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiõ random access memory |
6438 | HM51S4260ALZ-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiï random access memory |
6439 | HM51S4260ALZ-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamië random access memory |
6440 | HM51S4260ALZ-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÌ random access memory |
6441 | HM51S4260ARR-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiõ random access memory |
6442 | HM51S4260ARR-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiú random access memory |
6443 | HM51S4260ARR-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiß random access memory |
6444 | HM51S4260ATT-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÈ random access memory |
6445 | HM51S4260ATT-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÌ random access memory |
6446 | HM51S4260ATT-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamië random access memory |
6447 | HM51S4260AZ-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiæ random access memory |
6448 | HM51S4260AZ-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiï random access memory |
6449 | HM51S4260AZ-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÐ random access memory |
6450 | HM51S4260CJ-6 | 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiú random access memory |
6451 | HM51S4260CJ-6R | 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÇ random access memory |
6452 | HM51S4260CJ-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiß random access memory |
6453 | HM51S4260CJ-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiñ random access memory |
6454 | HM51S4260CLJ-6 | 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÈ random access memory |
6455 | HM51S4260CLJ-6R | 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamié random access memory |
6456 | HM51S4260CLJ-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiõ random access memory |
6457 | HM51S4260CLJ-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÓ random access memory |
6458 | HM51S4260CLTT-6 | 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamië random access memory |
6459 | HM51S4260CLTT-6R | 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÌ random access memory |
6460 | HM51S4260CLTT-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÊ random access memory |
6461 | HM51S4260CLTT-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamié random access memory |
6462 | HM51S4260CTT-6 | 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÎ random access memory |
6463 | HM51S4260CTT-6R | 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamií random access memory |
6464 | HM51S4260CTT-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiï random access memory |
6465 | HM51S4260CTT-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiò random access memory |
6466 | HM51S4800AJ-7 | 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6467 | HM51S4800AJ-8 | 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6468 | HM51S4800ALJ-7 | 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6469 | HM51S4800ALJ-8 | 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6470 | HM51S4800ALRR-7 | 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6471 | HM51S4800ALRR-8 | 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6472 | HM51S4800ALTT-7 | 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6473 | HM51S4800ALTT-8 | 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6474 | HM51S4800ARR-7 | 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6475 | HM51S4800ARR-8 | 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6476 | HM51S4800ATT-7 | 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6477 | HM51S4800ATT-8 | 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6478 | HM51S4800CJ-6 | 60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6479 | HM51S4800CJ-7 | 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6480 | HM51S4800CJ-8 | 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6481 | HM51S4800CJI-7 | 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6482 | HM51S4800CJI-8 | 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6483 | HM51S4800CLJ-6 | 60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6484 | HM51S4800CLJ-7 | 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6485 | HM51S4800CLJ-8 | 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6486 | HM51S4800CLJI-7 | 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6487 | HM51S4800CLJI-8 | 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6488 | HM51S4800CLTT-6 | 60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6489 | HM51S4800CLTT-7 | 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6490 | HM51S4800CLTT-8 | 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6491 | HM51S4800CTT-6 | 60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6492 | HM51S4800CTT-7 | 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6493 | HM51S4800CTT-8 | 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
6494 | HM51W16165 | 16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
6495 | HM51W16165J-5 | 16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
6496 | HM51W16165J-6 | 16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
6497 | HM51W16165J-7 | 16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
6498 | HM51W16165LJ-5 | 16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
6499 | HM51W16165LJ-6 | 16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
6500 | HM51W16165LJ-7 | 16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
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