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Hitachi Semiconductor

Datasheet Catalog - Page 2

Datasheets found :: 8475Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |
No.Part NameDescription
1011S313HSilicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source
1021S314Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source
1031S314HSilicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source
1041S315Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source
1051S315HSilicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source
1061S689Germanium Alloyed Junction Diode, VR(peak) -200V, intended for use in TV Horizontal Deflection Dampar
1071S689AGermanium Alloyed Junction Diode, VR(peak) -270V, intended for use in TV Horizontal Deflection Dampar
1081S750Silicon Point Contact Epitaxial, intended for use in UHF Tuner Mixer
1091S752HSilicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source
1101S753HSilicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source
1111S754HSilicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source
1121S755HSilicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source


1131S756HSilicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source
1141S757HSilicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source
1151S758HSilicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source
1161S759HSilicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source
1171S760HSilicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source
1181S761HSilicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source
1191S762HSilicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source
1201S763HSilicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source
1211S764HSilicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source
1221S765HSilicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source
1231S77Germanium Gold Bond for TV Horizontal Deflection Oscillator stage damper
1241S77HGermanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching
1251S78HGermanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching
1261S79HGermanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching
1271S80Germanium Point Contact Diode, intended for use as a General Detector
1281S84Silicon Diffused Rectifier
1291S84HSilicon Diffused for High Voltage Switching
1301S85Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance
1311S85HSilicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance
1321SS106Schottky Barrier Diodes for Detection and Mixer
1331SS108Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching
1341SS110Silicon Epitaxial Planar Diode for Tuner Band Switch
1351SS118Silicon Epitaxial Planar Diode for High Speed Switching
1361SS119Small Signal
1371SS120Small Signal
1381SS198Schottky Barrier Diodes for Detection and Mixer
1391SS199Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching
1401SS199MHDSilicon Schottky Barrier Diode for Various Detector/ High Speed Switching
1411SS270Small Signal
1421SS270ASmall Signal
1431SS286Schottky Barrier Diodes for Detection and Mixer
1441SS81Small Signal
1451SS82Small Signal
1461SS83Small Signal
1471SS86Schottky Barrier Diodes for Detection and Mixer
1481SS88Schottky Barrier Diodes for Detection and Mixer
1492SA1025Silicon PNP Epitaxial
1502SA1025Silicon PNP Transistor
1512SA1029Silicon PNP Transistor
1522SA1029Silicon PNP Epitaxial
1532SA1030Silicon PNP Epitaxial
1542SA1030Silicon PNP Transistor
1552SA1031Silicon PNP Epitaxial
1562SA1031Silicon PNP Transistor
1572SA1032Silicon PNP Transistor
1582SA1032Silicon PNP Epitaxial
1592SA1052Silicon PNP Transistor
1602SA1052Silicon PNP Epitaxial
1612SA1081Silicon PNP Transistor
1622SA1081Silicon PNP Epitaxial
1632SA1082Silicon PNP Epitaxial
1642SA1082Silicon PNP Transistor
1652SA1083Silicon PNP Transistor
1662SA1083Silicon PNP Epitaxial
1672SA1084Silicon PNP Epitaxial
1682SA1084Silicon PNP Transistor
1692SA1085Silicon PNP Transistor
1702SA1085Silicon PNP Epitaxial
1712SA1121Silicon PNP Transistor
1722SA1121Silicon PNP Epitaxial
1732SA1122Silicon PNP Transistor
1742SA1122Silicon PNP Epitaxial
1752SA1171Silicon PNP Epitaxial
1762SA1171Silicon PNP Transistor
1772SA1188Silicon PNP Transistor
1782SA1188Silicon PNP Epitaxial
1792SA1189Silicon PNP Epitaxial
1802SA1190Silicon PNP Epitaxial
1812SA1190Silicon PNP Transistor
1822SA1191Silicon PNP Epitaxial
1832SA1191Silicon PNP Transistor
1842SA1193Silicon PNP Epitaxial, Darlington
1852SA1193(K)Silicon PNP Darlington Transistor
1862SA1193KSilicon PNP Epitaxial, Darlington
1872SA1194Silicon PNP Epitaxial
1882SA1194(K)Silicon PNP Darlington Transistor
1892SA1194KSilicon PNP Epitaxial
1902SA12Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier
1912SA12HGermanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier
1922SA1337Silicon PNP Transistor
1932SA1337Silicon PNP Epitaxial
1942SA1350Silicon PNP Epitaxial
1952SA1350Silicon PNP Transistor
1962SA1374Silicon PNP Transistor
1972SA1374Silicon PNP Epitaxial
1982SA1390Silicon PNP Transistor
1992SA1390Silicon PNP Epitaxial
2002SA1468Silicon PNP Transistor


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