W4NXD8G-0000 datasheet

W4NXD8G-0000 manufactured by:

Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

Others with the same file for datasheet:
W4NRD0X-0000, W4NRD8C-U000, W4NXD8C-0000, W4NXD8C-L000, W4NXD8C-S000

Download W4NXD8G-0000 datasheet from
CREE POWER

pdf
277 kb

W4NXD8D-S000

View W4NXD8G-0000 to our catalog

W51300