PB-IRF6691 datasheet
PB-IRF6691 manufactured by:
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Leaded A 20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode in a DirectFET MT package rated at 180 amperes. Others with the same file for datasheet: IRF6691TR1 |
Download PB-IRF6691 datasheet from International Rectifier |
pdf 807 kb |
PB-IRF6678 | View PB-IRF6691 to our catalog | PB-IRF7101 |