PB-IRF6678 datasheet
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PB-IRF6678 manufactured by:
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Leaded A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes. Others with the same file for datasheet: IRF6678TR1 |
Download PB-IRF6678 datasheet from International Rectifier |
pdf 258 kb |
| PB-IRF6668 | View PB-IRF6678 to our catalog | PB-IRF6691 |