PB-IRF6618 datasheet
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PB-IRF6618 manufactured by:
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Leaded A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. | 
Download PB-IRF6618 datasheet from International Rectifier |
pdf 805 kb |
| PB-IRF6617 | View PB-IRF6618 to our catalog | PB-IRF6619 |