MTB6N60E1 datasheet
MTB6N60E1 manufactured by:
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TMOS POWER FET 6.0 AMPERES 600 VOLTS | Download MTB6N60E1 datasheet from Motorola |
pdf 167 kb |
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N-Channel Enhancement-Mode Silicon Gate | Download MTB6N60E1 datasheet from ON Semiconductor |
PDF 210 kb |
MTB6N60E | View MTB6N60E1 to our catalog | MTB6N60E1-D |