MTB4N80E1 datasheet
MTB4N80E1 manufactured by:
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TMOS POWER FET 4.0 AMPERES 800 VOLTS | Download MTB4N80E1 datasheet from Motorola |
pdf 167 kb |
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OBSOLETE - N-Channel Enhancement-Mode Silicon Gate | Download MTB4N80E1 datasheet from ON Semiconductor |
PDF 194 kb |
MTB4N80E-D | View MTB4N80E1 to our catalog | MTB4N80E1-D |