K4E160812D-F datasheet
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K4E160812D-F manufactured by:
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2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. Others with the same file for datasheet: K4E160811D-B, K4E160811D-F, K4E170811D-B, K4E170811D-F, K4E170812D-B |
Download K4E160812D-F datasheet from Samsung Electronic |
pdf 258 kb |
| K4E160812D-B | View K4E160812D-F to our catalog | K4E170411D |