IRF6691TR1 datasheet
IRF6691TR1 manufactured by:
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Leaded A 20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode in a DirectFET MT package rated at 180 amperes. Others with the same file for datasheet: PB-IRF6691 |
Download IRF6691TR1 datasheet from International Rectifier |
pdf 807 kb |
IRF6691 | View IRF6691TR1 to our catalog | IRF6691TR1PBF |