IRF323 datasheet
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IRF323 manufactured by:
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N-Channel Power MOSFETs/ 3.0 A/ 350-400 V Others with the same file for datasheet: IRF320, IRF320-323, IRF321, IRF721, IRF722 |
Download IRF323 datasheet from Fairchild Semiconductor |
pdf 170 kb |
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N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. | 
Download IRF323 datasheet from General Electric Solid State |
pdf 167 kb |
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2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs | 
Download IRF323 datasheet from Intersil |
pdf 72 kb |
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Trans MOSFET N-CH 350V 2.8A 3-Pin(2+Tab) TO-3 | Download IRF323 datasheet from New Jersey Semiconductor |
pdf 136 kb |
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N-CHANNEL POWER MOSFETS | Download IRF323 datasheet from Samsung Electronic |
pdf 218 kb |
| IRF322 | View IRF323 to our catalog | IRF330 |