IRF252 datasheet
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IRF252 manufactured by:
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N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 25A. Others with the same file for datasheet: IRF250, IRF253 |
Download IRF252 datasheet from General Electric Solid State |
pdf 200 kb |
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25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs | 
Download IRF252 datasheet from Intersil |
pdf 63 kb |
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Trans MOSFET 200V 25A 3-Pin(2+Tab) TO-3 Others with the same file for datasheet: IRF250CF, IRF250FI, IRF250R |
Download IRF252 datasheet from New Jersey Semiconductor |
pdf 135 kb |
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N-CHANNEL POWER MOSFETS | Download IRF252 datasheet from Samsung Electronic |
pdf 220 kb |
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MOSPOWER N-Channel Enhancement Mode Transistor 200V 25A | Download IRF252 datasheet from Siliconix |
pdf 799 kb |
| IRF251 | View IRF252 to our catalog | IRF252R |