BF1009S datasheet
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BF1009S manufactured by:
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RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand | 
Download BF1009S datasheet from Infineon |
pdf 255 kb |
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Silicon N-Channel MOSFET Tetrode for ... | 
Download BF1009S datasheet from Infineon |
pdf 92 kb |
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Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) Others with the same file for datasheet: Q62702-F1628 |
Download BF1009S datasheet from Siemens |
pdf 56 kb |
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