|   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to:  1N  2N  2SA  2SC  74  AD  BA  BC  BD  BF  BU  CXA  HCF  IRF  KA  KIA  LA  LM  MC  NE  ST  STK  TDA  TL  UAUp1 Up level 1
LM317 LM339 MAX232 NE555 LM324 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148 TDA7296 Up2 Up level 2

2N5089 datasheet

2N5089 manufactured by:
Central Semiconductor Leaded Small Signal Transistor General Purpose

Others with the same file for datasheet:
2N5088

2N5089 datasheet pdf Central Semiconductor
Download 2N5089 datasheet from
Central Semiconductor
pdf
 71 kb 
Continental Device India Limited 0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.050A Ic, 400 - 1200 hF
2N5089 datasheet pdf Continental Device India Limited
Download 2N5089 datasheet from
Continental Device India Limited
pdf
 153 kb 
Fairchild Semiconductor NPN General Purpose Amplifier
2N5089 datasheet pdf Fairchild Semiconductor
Download 2N5089 datasheet from
Fairchild Semiconductor
pdf
 495 kb 
Micro Electronics SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS

Others with the same file for datasheet:
2N5086, 2N5087
Download 2N5089 datasheet from
Micro Electronics
pdf
 197 kb 
Motorola NPN silicon annular transistor designed for low-level, low-noise amplifier applications Download 2N5089 datasheet from
Motorola
pdf
 2730 kb 


Motorola Silicon NPN Transistor

Others with the same file for datasheet:
2N5042, 2N5043, 2N5044, 2N5048, 2N5049
Download 2N5089 datasheet from
Motorola
pdf
 1769 kb 
National Semiconductor NPN Transistor - Low level AMPS

Others with the same file for datasheet:
2N3877A, 2N3900, 2N3900A, 2N3901, 2N4286
Download 2N5089 datasheet from
National Semiconductor
pdf
 819 kb 
New Jersey Semiconductor Trans GP BJT NPN 25V 0.05A 3-Pin TO-92 Box Download 2N5089 datasheet from
New Jersey Semiconductor
pdf
 98 kb 
ON Semiconductor Small Signal Amplifier NPN

Others with the same file for datasheet:
2N5088RLRA, 2N5089RLRA, 2N5089RLRE
Download 2N5089 datasheet from
ON Semiconductor
pdf
 155 kb 
Samsung Electronic NPN EPITAXIAL SILICON TRANSISTOR Download 2N5089 datasheet from
Samsung Electronic
pdf
 38 kb 
USHA India LTD Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. Download 2N5089 datasheet from
USHA India LTD
pdf
 85 kb 
2N5088_J61Z View 2N5089 to our catalog 2N5089BU




© 2024 - Datasheet Catalog com