| 92801 | 2N6740 | 100.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 10 - 40 hFE. | Continental Device India Limited |
| 92802 | 2N6740 | POWER TRANSISTORS(8.0A,100W) | MOSPEC Semiconductor |
| 92803 | 2N6740 | Silicon NPN Power Transistors TO-220 package | Savantic |
| 92804 | 2N675 | Germanium PNP Transistor | Motorola |
| 92805 | 2N6751 | 5 A SwitchMax power transistor. High voltage N-P-N type. | General Electric Solid State |
| 92806 | 2N6751 | Trans GP BJT NPN 400V 10A | New Jersey Semiconductor |
| 92807 | 2N6751 | Silicon NPN Power Transistors TO-3 package | Savantic |
| 92808 | 2N6751 | Bipolar NPN Device | SemeLAB |
| 92809 | 2N6752 | 5 A SwitchMax power transistor. High voltage N-P-N type. | General Electric Solid State |
| 92810 | 2N6752 | Trans GP BJT NPN 450V 10A | New Jersey Semiconductor |
| 92811 | 2N6752 | Silicon NPN Power Transistors TO-3 package | Savantic |
| 92812 | 2N6753 | 5 A SwitchMax power transistor. High voltage N-P-N type. | General Electric Solid State |
| 92813 | 2N6753 | Trans GP BJT NPN 500V 10A | New Jersey Semiconductor |
| 92814 | 2N6753 | Silicon NPN Power Transistors TO-3 package | Savantic |
| 92815 | 2N6753 | Bipolar NPN Device | SemeLAB |
| 92816 | 2N6754 | 5 A SwitchMax power transistor. High voltage N-P-N type. | General Electric Solid State |
| 92817 | 2N6754 | Trans GP BJT NPN 500V 10A | New Jersey Semiconductor |
| 92818 | 2N6754 | Silicon NPN Power Transistors TO-3 package | Savantic |
| 92819 | 2N6754 | Bipolar NPN Device | SemeLAB |
|
| 92820 | 2N6755 | N-Channel Power MOSFETs/ 14 A/ 60 A/100 V | Fairchild Semiconductor |
| 92821 | 2N6755 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. | General Electric Solid State |
| 92822 | 2N6755 | Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 92823 | 2N6756 | N-Channel Power MOSFETs/ 14 A/ 60 A/100 V | Fairchild Semiconductor |
| 92824 | 2N6756 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. | General Electric Solid State |
| 92825 | 2N6756 | 100V Single N-Channel Hi-Rel MOSFET in a TO-204AA package | International Rectifier |
| 92826 | 2N6756 | N-Channel | Microsemi |
| 92827 | 2N6756 | Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 92828 | 2N6756E3 | N-Channel | Microsemi |
| 92829 | 2N6757 | N-Channel Power MOSFETs/ 9A/ 150V/200V | Fairchild Semiconductor |
| 92830 | 2N6757 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. | General Electric Solid State |
| 92831 | 2N6758 | N-Channel Power MOSFETs/ 9A/ 150V/200V | Fairchild Semiconductor |
| 92832 | 2N6758 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. | General Electric Solid State |
| 92833 | 2N6758 | 200V Single N-Channel Hi-Rel MOSFET in a TO-204AA package | International Rectifier |
| 92834 | 2N6758 | N-Channel | Microsemi |
| 92835 | 2N6758E3 | N-Channel | Microsemi |
| 92836 | 2N6759 | N-Channel Power MOSFETs/ 5.5A/ 350V/400V | Fairchild Semiconductor |
| 92837 | 2N6759 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. | General Electric Solid State |
| 92838 | 2N6760 | N-Channel Power MOSFETs/ 5.5A/ 350V/400V | Fairchild Semiconductor |
| 92839 | 2N6760 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. | General Electric Solid State |
| 92840 | 2N6760 | 400V Single N-Channel Hi-Rel MOSFET in a TO-204AA package | International Rectifier |
