|   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to:  1N  2N  2SA  2SC  74  AD  BA  BC  BD  BF  BU  CXA  HCF  IRF  KA  KIA  LA  LM  MC  NE  ST  STK  TDA  TL  UA
LM317 LM339 MAX232 NE555 LM324 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148 G45A


Datasheets found :: 1726161
Page: << | 2248 | 2249 | 2250 | 2251 | 2252 | 2253 | 2254 | 2255 | 2256 | 2257 | 2258 | >>
No.Part NameDescriptionManufacturer
900812N5627Silicon PNP Power Transistors TO-3 packageSavantic
900822N5628Silicon NPN Power Transistors TO-3 packageSavantic
900832N5629COMPLEMENTARY SILICON POWER TRANSISTORSCentral Semiconductor
900842N5629Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W.General Electric Solid State
900852N5629Trans GP BJT NPN 100V 16A 3-Pin(2+Tab) TO-3 SleeveNew Jersey Semiconductor
900862N5629Silicon NPN Power Transistors TO-3 packageSavantic
900872N563Germanium PNP TransistorMotorola
900882N5630COMPLEMENTARY SILICON POWER TRANSISTORSCentral Semiconductor
900892N5630Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W.General Electric Solid State
900902N5630Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuitsMotorola
900912N5630Trans GP BJT NPN 120V 16A 3-Pin(2+Tab) TO-3 SleeveNew Jersey Semiconductor
900922N5630Silicon NPN Power Transistors TO-3 packageSavantic
900932N5630Bipolar NPN DeviceSemeLAB
900942N5631Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W.General Electric Solid State
900952N5631Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuitsMotorola
900962N5631Trans GP BJT NPN 140V 16A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
900972N5631High-Voltage High-Power TransistorsON Semiconductor
900982N5631Silicon NPN Power Transistors TO-3 packageSavantic
900992N5631NPN transistor, 140V, 16ASemeLAB


901002N5631-DHigh-Voltage - High Power TransistorsON Semiconductor
901012N5632Leaded Power Transistor General PurposeCentral Semiconductor
901022N5632Trans GP BJT NPN 100V 10A 3-Pin(2+Tab) TO-3 SleeveNew Jersey Semiconductor
901032N5632Silicon NPN Power Transistors TO-3 packageSavantic
901042N5632Bipolar NPN Device in a Hermetically sealed TO3 Metal PackageSemeLAB
901052N5633SILICON POWER TRANSISTORCentral Semiconductor
901062N5633SILICON POWER TRANSISTORCentral Semiconductor
901072N5633Trans GP BJT NPN 120V 15A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
901082N5633Silicon NPN Power Transistors TO-3 packageSavantic
901092N5633Bipolar NPN Device in a Hermetically sealed TO3 Metal PackageSemeLAB
901102N5633Bipolar NPN Device in a Hermetically sealed TO3 Metal PackageSemeLAB
901112N5634SILICON POWER TRANSISTORCentral Semiconductor
901122N5634Trans GP BJT NPN 140V 15A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
901132N5634Silicon NPN Power Transistors TO-3 packageSavantic
901142N5634Bipolar NPN DeviceSemeLAB
901152N5635Trans GP BJT NPN 100V 10A 3-Pin(2+Tab) TO-3 SleeveNew Jersey Semiconductor
901162N5636Trans GP BJT NPN 100V 10A 3-Pin(2+Tab) TO-3 SleeveNew Jersey Semiconductor
901172N5637Trans GP BJT NPN 100V 10A 3-Pin(2+Tab) TO-3 SleeveNew Jersey Semiconductor
901182N5638N-Channel SwitchFairchild Semiconductor
901192N5638N-channel JFET switchIntersil
901202N5638JFET Chopper TransistorsON Semiconductor


Datasheets found :: 1726161
Page: << | 2248 | 2249 | 2250 | 2251 | 2252 | 2253 | 2254 | 2255 | 2256 | 2257 | 2258 | >>


© 2024    www.datasheetcatalog.com