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Datasheets found :: 1726161
Page: << | 20278 | 20279 | 20280 | 20281 | 20282 | 20283 | 20284 | 20285 | 20286 | 20287 | 20288 | >>
No.Part NameDescriptionManufacturer
811281KM416V1004BT-L63.3V, 1M x 16 bit CMOS DRAM with extended data out, 60nsSamsung Electronic
811282KM416V1004BT-L73.3V, 1M x 16 bit CMOS DRAM with extended data out, 70nsSamsung Electronic
811283KM416V1004C1M x 16Bit CMOS Dynamic RAM with Extended Data OutSamsung Electronic
811284KM416V1004CJ-451M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64msSamsung Electronic
811285KM416V1004CJ-53.3V, 1M x 16 bit CMOS DRAM with extended data out, 50nsSamsung Electronic
811286KM416V1004CJ-501M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64msSamsung Electronic
811287KM416V1004CJ-63.3V, 1M x 16 bit CMOS DRAM with extended data out, 60nsSamsung Electronic
811288KM416V1004CJ-601M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64msSamsung Electronic
811289KM416V1004CJ-L53.3V, 1M x 16 bit CMOS DRAM with extended data out, 50nsSamsung Electronic
811290KM416V1004CJ-L63.3V, 1M x 16 bit CMOS DRAM with extended data out, 60nsSamsung Electronic
811291KM416V1004CJL-451M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refreshSamsung Electronic
811292KM416V1004CJL-501M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refreshSamsung Electronic
811293KM416V1004CJL-601M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refreshSamsung Electronic
811294KM416V1004CT-451M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64msSamsung Electronic
811295KM416V1004CT-53.3V, 1M x 16 bit CMOS DRAM with extended data out, 50nsSamsung Electronic
811296KM416V1004CT-501M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64msSamsung Electronic
811297KM416V1004CT-63.3V, 1M x 16 bit CMOS DRAM with extended data out, 60nsSamsung Electronic
811298KM416V1004CT-601M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64msSamsung Electronic
811299KM416V1004CT-L53.3V, 1M x 16 bit CMOS DRAM with extended data out, 50nsSamsung Electronic


811300KM416V1004CT-L63.3V, 1M x 16 bit CMOS DRAM with extended data out, 60nsSamsung Electronic
811301KM416V1004CTL-451M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refreshSamsung Electronic
811302KM416V1004CTL-501M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refreshSamsung Electronic
811303KM416V1004CTL-601M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refreshSamsung Electronic
811304KM416V1200B1M x 16Bit CMOS Dynamic RAM with Fast Page ModeSamsung Electronic
811305KM416V1200BJ-51M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50nsSamsung Electronic
811306KM416V1200BJ-61M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60nsSamsung Electronic
811307KM416V1200BJ-71M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70nsSamsung Electronic
811308KM416V1200BJL-51M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50nsSamsung Electronic
811309KM416V1200BJL-61M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60nsSamsung Electronic
811310KM416V1200BJL-71M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70nsSamsung Electronic
811311KM416V1200BT-51M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50nsSamsung Electronic
811312KM416V1200BT-61M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60nsSamsung Electronic
811313KM416V1200BT-71M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70nsSamsung Electronic
811314KM416V1200BTL-51M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50nsSamsung Electronic
811315KM416V1200BTL-61M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60nsSamsung Electronic
811316KM416V1200BTL-71M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70nsSamsung Electronic
811317KM416V1200C1M x 16Bit CMOS Dynamic RAM with Fast Page ModeSamsung Electronic
811318KM416V1200CJ-51M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50nsSamsung Electronic
811319KM416V1200CJ-61M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60nsSamsung Electronic
811320KM416V1200CJL-51M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50nsSamsung Electronic


Datasheets found :: 1726161
Page: << | 20278 | 20279 | 20280 | 20281 | 20282 | 20283 | 20284 | 20285 | 20286 | 20287 | 20288 | >>


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