| 797561 | K4EBP-110V-1 | K-relay. Uniquely designed relay. 4 form C. Coil voltage 110 V DC. PC board terminal. Ordinary sensitive relay. Amber sealed type. | Matsushita Electric Works(Nais) |
| 797562 | K4F151611 | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode | Samsung Electronic |
| 797563 | K4F151611D | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode | Samsung Electronic |
| 797564 | K4F151611D-J | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. | Samsung Electronic |
| 797565 | K4F151611D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. | Samsung Electronic |
| 797566 | K4F151612D | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode | Samsung Electronic |
| 797567 | K4F151612D-J | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. | Samsung Electronic |
| 797568 | K4F151612D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. | Samsung Electronic |
| 797569 | K4F16(7)0811(2)D | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet | Samsung Electronic |
| 797570 | K4F160411C-B50 | 4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung Electronic |
| 797571 | K4F160411C-B60 | 4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung Electronic |
| 797572 | K4F160411C-F50 | 4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung Electronic |
| 797573 | K4F160411C-F60 | 4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung Electronic |
| 797574 | K4F160411D | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode | Samsung Electronic |
| 797575 | K4F160411D-B | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung Electronic |
| 797576 | K4F160411D-F | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung Electronic |
| 797577 | K4F160412C-B50 | 4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns | Samsung Electronic |
| 797578 | K4F160412C-B60 | 4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung Electronic |
| 797579 | K4F160412C-F50 | 4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns | Samsung Electronic |
|
| 797580 | K4F160412C-F60 | 4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung Electronic |
| 797581 | K4F160412D | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode | Samsung Electronic |
| 797582 | K4F160412D-B | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. | Samsung Electronic |
| 797583 | K4F160412D-F | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. | Samsung Electronic |
| 797584 | K4F160811D | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode | Samsung Electronic |
| 797585 | K4F160811D-B | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung Electronic |
| 797586 | K4F160811D-F | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung Electronic |
| 797587 | K4F160812D | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode | Samsung Electronic |
| 797588 | K4F160812D-B | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. | Samsung Electronic |
| 797589 | K4F160812D-F | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. | Samsung Electronic |
| 797590 | K4F170411C-B50 | 4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung Electronic |
| 797591 | K4F170411C-B60 | 4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung Electronic |
| 797592 | K4F170411C-F50 | 4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung Electronic |
| 797593 | K4F170411C-F60 | 4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung Electronic |
| 797594 | K4F170411D | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode | Samsung Electronic |
| 797595 | K4F170411D-B | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. | Samsung Electronic |
| 797596 | K4F170411D-F | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. | Samsung Electronic |
| 797597 | K4F170412C-B50 | 4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns | Samsung Electronic |
| 797598 | K4F170412C-B60 | 4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung Electronic |
| 797599 | K4F170412C-F50 | 4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns | Samsung Electronic |
| 797600 | K4F170412C-F60 | 4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung Electronic |
