| 756201 | IRF423 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 756202 | IRF430 | N-Channel Power MOSFETs/ 4.5 A/ 450V/500V | Fairchild Semiconductor |
| 756203 | IRF430 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. | General Electric Solid State |
| 756204 | IRF430 | 500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package | International Rectifier |
| 756205 | IRF430 | 4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET | Intersil |
| 756206 | IRF430 | Trans MOSFET N-CH 500V 4.5A 3-Pin(2+Tab) TO-204AA | New Jersey Semiconductor |
| 756207 | IRF430 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 756208 | IRF430 | N-CHANNEL POWER MOSFET | SemeLAB |
| 756209 | IRF430-433 | N-Channel Power MOSFETs/ 4.5 A/ 450V/500V | Fairchild Semiconductor |
| 756210 | IRF430R | Trans MOSFET N-CH 500V 4.5A 3-Pin(2+Tab) TO-204AA | New Jersey Semiconductor |
| 756211 | IRF431 | N-Channel Power MOSFETs/ 4.5 A/ 450V/500V | Fairchild Semiconductor |
| 756212 | IRF431 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. | General Electric Solid State |
| 756213 | IRF431 | 4.0A and 4.5A, 450V and 500V, 1.5 and 2.0 Ohm, N-Channel Power MOSFETs | Intersil |
| 756214 | IRF431 | Trans MOSFET N-CH 450V 4.5A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 756215 | IRF431 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 756216 | IRF432 | N-Channel Power MOSFETs/ 4.5 A/ 450V/500V | Fairchild Semiconductor |
| 756217 | IRF432 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. | General Electric Solid State |
| 756218 | IRF432 | 4.0A and 4.5A, 450V and 500V, 1.5 and 2.0 Ohm, N-Channel Power MOSFETs | Intersil |
| 756219 | IRF432 | HEXFET POWER MOSFETS | New Jersey Semiconductor |
|
| 756220 | IRF432 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 756221 | IRF433 | N-Channel Power MOSFETs/ 4.5 A/ 450V/500V | Fairchild Semiconductor |
| 756222 | IRF433 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. | General Electric Solid State |
| 756223 | IRF433 | 4.0A and 4.5A, 450V and 500V, 1.5 and 2.0 Ohm, N-Channel Power MOSFETs | Intersil |
| 756224 | IRF433 | Trans MOSFET N-CH 450V 4A 3-Pin (2+Tab) TO-3 | New Jersey Semiconductor |
| 756225 | IRF433 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 756226 | IRF440 | N-Channel Power MOSFETs/ 8A/ 450 V/500V | Fairchild Semiconductor |
| 756227 | IRF440 | 500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package | International Rectifier |
| 756228 | IRF440 | 8A/ 500V/ 0.850 Ohm/ N-Channel Power MOSFET | Intersil |
| 756229 | IRF440 | Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 756230 | IRF440 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 756231 | IRF440-443 | N-Channel Power MOSFETs/ 8A/ 450 V/500V | Fairchild Semiconductor |
| 756232 | IRF440R | Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 756233 | IRF441 | N-Channel Power MOSFETs/ 8A/ 450 V/500V | Fairchild Semiconductor |
| 756234 | IRF441 | 7A and 8A, 450V and 500V, 0.85 and 1.1 Ohm, N-Channel Power MOSFETs | Intersil |
| 756235 | IRF441 | Trans MOSFET N-CH 450V 8A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 756236 | IRF441 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 756237 | IRF442 | N-Channel Power MOSFETs/ 8A/ 450 V/500V | Fairchild Semiconductor |
| 756238 | IRF442 | 7A and 8A, 450V and 500V, 0.85 and 1.1 Ohm, N-Channel Power MOSFETs | Intersil |
| 756239 | IRF442 | Trans MOSFET N-CH 500V 7A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 756240 | IRF442 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
