48841 | 1N5546A | Low Voltage Avalanche Zener | Microsemi |
48842 | 1N5546A | Diode Zener Single 33V 10% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
48843 | 1N5546A-1 | Low Voltage Avalanche Zener | Microsemi |
48844 | 1N5546A-1E3 | Low Voltage Avalanche Zener | Microsemi |
48845 | 1N5546B | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Devices Incorporated |
48846 | 1N5546B | 0.4 W, low voltage avalanche diode. Nominal zener voltage 33.0 V. Test current 1.0 mAdc. +-5% tolerance. | Jinan Gude Electronic Device |
48847 | 1N5546B | Low Voltage Avalanche Zener | Microsemi |
48848 | 1N5546B | Low Voltage Avalanche Zener | Microsemi |
48849 | 1N5546B | Diode Zener Single 33V 5% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
48850 | 1N5546B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Devices Incorporated |
48851 | 1N5546B-1 | Low Voltage Avalanche Zener | Microsemi |
48852 | 1N5546B-1E3 | Low Voltage Avalanche Zener | Microsemi |
48853 | 1N5546BUR | Zener Voltage Regulator Diode | Microsemi |
48854 | 1N5546BUR-1 | Low Voltage Avalanche Zener | Microsemi |
48855 | 1N5546BUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
48856 | 1N5546C | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
48857 | 1N5546C | Diode Zener Single 33V 2% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
48858 | 1N5546C-1 | Low Voltage Avalanche Zener | Microsemi |
48859 | 1N5546C-1E3 | Low Voltage Avalanche Zener | Microsemi |
|
48860 | 1N5546CUR-1 | Low Voltage Avalanche Zener | Microsemi |
48861 | 1N5546CUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
48862 | 1N5546D | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
48863 | 1N5546D | Diode Zener Single 33V 1% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
48864 | 1N5546D-1 | Low Voltage Avalanche Zener | Microsemi |
48865 | 1N5546D-1E3 | Low Voltage Avalanche Zener | Microsemi |
48866 | 1N5546DUR-1 | Low Voltage Avalanche Zener | Microsemi |
48867 | 1N5546DUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
48868 | 1N555 | Rectifier Diode | Motorola |
48869 | 1N5550 | Leaded Rectifier Fast Recovery | Central Semiconductor |
48870 | 1N5550 | GLASS PASSIVATED JUNCTION RECTIFIER | General Semiconductor |
48871 | 1N5550 | Standard Rectifier (trr more than 500ns) | Microsemi |
48872 | 1N5550 | Diode Switching 200V 3A 2-Pin GPR-3A | New Jersey Semiconductor |
48873 | 1N5550 | 5A standard recovery rectifier diode, 200V | Semtech |
48874 | 1N5550 | Standard Sinterglass Diode | Vishay |
48875 | 1N5550 | 200 V rectifier 5.0 A forward current, 2000 ns recovery time | Voltage Multipliers |
48876 | 1N5550-1 | RECTIFIERS | Microsemi |
48877 | 1N5550E3 | Standard Rectifier (trr more than 500ns) | Microsemi |
48878 | 1N5550US | Standard Rectifier (trr more than 500ns) | Microsemi |
48879 | 1N5550USE3 | Standard Rectifier (trr more than 500ns) | Microsemi |
48880 | 1N5551 | Leaded Rectifier Fast Recovery | Central Semiconductor |