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Datasheets found :: 1726161
Page: << | 10026 | 10027 | 10028 | 10029 | 10030 | 10031 | 10032 | 10033 | 10034 | 10035 | 10036 | >>
No.Part NameDescriptionManufacturer
401201CR3500SCThe CR range of protectors are based on the proven technology of the T10 thyristor productLittelfuse
401202CR360Diode Current Reg. 135V 3.96mA 2-Pin TO-206AANew Jersey Semiconductor
401203CR360Current Regulator DiodeVishay
401204CR3602AABi-directional Glass passivated junctionLittelfuse
401205CR3602ABBi-directional Glass passivated junctionLittelfuse
401206CR3602ACBi-directional Glass passivated junctionLittelfuse
401207CR3710Integrated ATAPI DVD Drive ManagerCirrus Logic
401208CR3710Integrated ATAPI DVD Drive ManagerCirrus Logic
401209CR390Diode Current Reg. 135V 4.29mA 2-Pin TO-206AANew Jersey Semiconductor
401210CR390Current Regulator DiodeVishay
401211CR3AMZHIGH-SPEED SWITCHING THYRISTOR - LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPEMitsubishi Electric Corporation
401212CR3EMMITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPEMitsubishi Electric Corporation
401213CR3F-010Leaded Rectifier Fast RecoveryCentral Semiconductor
401214CR3F-020Leaded Rectifier Fast RecoveryCentral Semiconductor
401215CR3F-040Leaded Rectifier Fast RecoveryCentral Semiconductor
401216CR3F-060Leaded Rectifier Fast RecoveryCentral Semiconductor
401217CR3F-080Leaded Rectifier Fast RecoveryCentral Semiconductor
401218CR3F-100Leaded Rectifier Fast RecoveryCentral Semiconductor
401219CR3JMHIGH-SPEED SWITCHING THYRISTOR - LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPEMitsubishi Electric Corporation


401220CR3JMIntegrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
401221CR3KM-12Thyristor (Low Power Use)Renesas
401222CR3PMMITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPEMitsubishi Electric Corporation
401223CR3PM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
401224CR3PM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
401225CR3U-010Leaded Rectifier Ultra FastCentral Semiconductor
401226CR3U-020Leaded Rectifier Ultra FastCentral Semiconductor
401227CR3U-040Leaded Rectifier Ultra FastCentral Semiconductor
401228CR3U-060Leaded Rectifier Ultra FastCentral Semiconductor
401229CR3U-080Leaded Rectifier Ultra FastCentral Semiconductor
401230CR3U-100Leaded Rectifier Ultra FastCentral Semiconductor
401231CR40-010Leaded Rectifier General PurposeCentral Semiconductor
401232CR40-020Leaded Rectifier General PurposeCentral Semiconductor
401233CR40-040Leaded Rectifier General PurposeCentral Semiconductor
401234CR40-060Leaded Rectifier General PurposeCentral Semiconductor
401235CR40-080Leaded Rectifier General PurposeCentral Semiconductor
401236CR40-100Leaded Rectifier General PurposeCentral Semiconductor
401237CR400ELPhase Control SCR 400 Amperes Avg 200-1200 VoltsPowerex Power Semiconductors
401238CR400EL-10Phase Control SCR 400 Amperes Avg 200-1200 VoltsPowerex Power Semiconductors
401239CR400EL-12Phase Control SCR 400 Amperes Avg 200-1200 VoltsPowerex Power Semiconductors
401240CR400EL-16Phase Control SCR 400 Amperes Avg 200-1200 VoltsPowerex Power Semiconductors


Datasheets found :: 1726161
Page: << | 10026 | 10027 | 10028 | 10029 | 10030 | 10031 | 10032 | 10033 | 10034 | 10035 | 10036 | >>


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