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Datasheets found :: 1726161
Page: << | 10017 | 10018 | 10019 | 10020 | 10021 | 10022 | 10023 | 10024 | 10025 | 10026 | 10027 | >>
No.Part NameDescriptionManufacturer
400841CR10YSurface Mount LEDsMarktech Optoelectronics
400842CR10YGSurface Mount LEDsMarktech Optoelectronics
400843CR110Diode Current Reg. 100V 1.21mA 2-Pin TO-18New Jersey Semiconductor
400844CR1100SAThe CR range of protectors are based on the proven technology of the T10 thyristor productLittelfuse
400845CR1100SBThe CR range of protectors are based on the proven technology of the T10 thyristor productLittelfuse
400846CR1100SCThe CR range of protectors are based on the proven technology of the T10 thyristor productLittelfuse
400847CR12-010Leaded Rectifier General PurposeCentral Semiconductor
400848CR12-020Leaded Rectifier General PurposeCentral Semiconductor
400849CR12-040Leaded Rectifier General PurposeCentral Semiconductor
400850CR12-060Leaded Rectifier General PurposeCentral Semiconductor
400851CR120Diode Current Reg. 100V 1.32mA 2-Pin TO-18New Jersey Semiconductor
400852CR1216Lithium Manganese Dioxide BatteryUnknow
400853CR1220ECR1220 Button Cell BatteryEVE BATTERY
400854CR1225CR1225EVE BATTERY
400855CR1296Triple video driver hybrid amplifierPhilips
400856CR12ASurface Mount LEDsMarktech Optoelectronics
400857CR12AMMITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPEMitsubishi Electric Corporation
400858CR12AM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
400859CR12AM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation


400860CR12BMMITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPEMitsubishi Electric Corporation
400861CR12NRSurface Mount LEDsMarktech Optoelectronics
400862CR12PGSurface Mount LEDsMarktech Optoelectronics
400863CR12RSurface Mount LEDsMarktech Optoelectronics
400864CR12SRSurface Mount LEDsMarktech Optoelectronics
400865CR12YSurface Mount LEDsMarktech Optoelectronics
400866CR130Diode Current Reg. 100V 1.43mA 2-Pin TO-18New Jersey Semiconductor
400867CR1300SAThe CR range of protectors are based on the proven technology of the T10 thyristor productLittelfuse
400868CR1300SBThe CR range of protectors are based on the proven technology of the T10 thyristor productLittelfuse
400869CR1300SCThe CR range of protectors are based on the proven technology of the T10 thyristor productLittelfuse
400870CR14ISO14443-B Reader ICST Microelectronics
400871CR14-MQP/1GEISO14443-B Reader ICST Microelectronics
400872CR14-MQTP/1GEISO14443-B Reader ICST Microelectronics
400873CR140Diode Current Reg. 100V 1.54mA 2-Pin TO-18New Jersey Semiconductor
400874CR1402AABi-directional Glass passivated junctionLittelfuse
400875CR1402ABBi-directional Glass passivated junctionLittelfuse
400876CR1402ACBi-directional Glass passivated junctionLittelfuse
400877CR14250SEHigh Capacity Cylindrical Laser Sealed Primary Lithium BatterySANYO
400878CR150Diode Current Reg. 100V 1.65mA 2-Pin TO-18New Jersey Semiconductor
400879CR150-010Leaded Rectifier General PurposeCentral Semiconductor
400880CR150-020Leaded Rectifier General PurposeCentral Semiconductor


Datasheets found :: 1726161
Page: << | 10017 | 10018 | 10019 | 10020 | 10021 | 10022 | 10023 | 10024 | 10025 | 10026 | 10027 | >>


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