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Datasheets found :: 1726161
Page: << | 9731 | 9732 | 9733 | 9734 | 9735 | 9736 | 9737 | 9738 | 9739 | 9740 | 9741 | >>
No.Part NameDescriptionManufacturer
389401CM400DU-12NFHHigh Frequency Dual IGBTMOD¢â 400 Amperes/600 VoltsPowerex Power Semiconductors
389402CM400DU-24FIGBT Modules:1200VMitsubishi Electric Corporation
389403CM400DU-24FDual IGBTMOD 400 Amperes/1200 VoltsPowerex Power Semiconductors
389404CM400DU-34KAIGBT Modules:1700VMitsubishi Electric Corporation
389405CM400DU-34KADual IGBTMOD 400 Amperes/1700 VoltsPowerex Power Semiconductors
389406CM400DU-5FIntegrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
389407CM400DU-5FTrench Gate Design Dual IGBTMOD¢â 400 Amperes/250 VoltsPowerex Power Semiconductors
389408CM400DY-12HHIGH POWER SWITCHING USE INSULATED TYPE IGBT MODULESMitsubishi Electric Corporation
389409CM400DY-12HIGBT Modules: 600VMitsubishi Electric Corporation
389410CM400DY-12HDual IGBTMOD 400 Amperes/600 VoltsPowerex Power Semiconductors
389411CM400DY-24AHIGH POWER SWITCHING USEMitsubishi Electric Corporation
389412CM400DY-50HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) ModulesMitsubishi Electric Corporation
389413CM400DY-50HHIGH POWER SWITCHING USE INSULATED TYPEPowerex Power Semiconductors
389414CM400DY-66HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) ModulesMitsubishi Electric Corporation
389415CM400DY-66HHIGH POWER SWITCHING USE INSULATED TYPEPowerex Power Semiconductors
389416CM400HA-12HIGBT Modules: 600VMitsubishi Electric Corporation
389417CM400HA-12HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
389418CM400HA-12HSingle IGBTMOD 400 Amperes/600 VoltsPowerex Power Semiconductors
389419CM400HA-24HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation


389420CM400HA-24Single IGBTMOD 400 Amperes/1200 VoltsPowerex Power Semiconductors
389421CM400HA-24HIGBT Modules:1200VMitsubishi Electric Corporation
389422CM400HA-24HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
389423CM400HA-24HSingle IGBTMOD 400 Amperes/1200 VoltsPowerex Power Semiconductors
389424CM400HA-28HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
389425CM400HA-28HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) ModulesMitsubishi Electric Corporation
389426CM400HA-28HSingle IGBTMOD 400 Amperes/1400 VoltsPowerex Power Semiconductors
389427CM400HA-34HIGBT Modules:1700VMitsubishi Electric Corporation
389428CM400HA-34HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
389429CM400HA-34HSingle IGBTMOD 400 Amperes/1700 VoltsPowerex Power Semiconductors
389430CM400HB-90HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) ModulesMitsubishi Electric Corporation
389431CM400HB-90HSingle IGBTMOD¢â HVIGBT 400 Amperes/4500 VoltsPowerex Power Semiconductors
389432CM400HU-24FMITSUBISHI IGBT MODULES HIGH POWER SWITCHING USEMitsubishi Electric Corporation
389433CM400HU-24FIGBT Modules:1200VMitsubishi Electric Corporation
389434CM400HU-24FTrench Gate Design Single IGBTMOD¢â 400 Amperes/1200 VoltsPowerex Power Semiconductors
389435CM400HU-24HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
389436CM400HU-24HIGBT Modules:1200VMitsubishi Electric Corporation
389437CM400HU-24HSingle IGBTMOD 400 Amperes/1200 VoltsPowerex Power Semiconductors
389438CM420855SCR/Diode POW-R-BLOK¢â Modules 55 Amperes/800 VoltsPowerex Power Semiconductors
389439CM420890SCR/Diode POW-R-BLOK¢â Modules 90 Amperes/800 VoltsPowerex Power Semiconductors
389440CM4208A2SCR/Diode POW-R-BLOK¢â Modules 25 Amperes/800 VoltsPowerex Power Semiconductors


Datasheets found :: 1726161
Page: << | 9731 | 9732 | 9733 | 9734 | 9735 | 9736 | 9737 | 9738 | 9739 | 9740 | 9741 | >>


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