| 315921 | BF997 | Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) | Siemens |
| 315922 | BF998 | RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB | Infineon |
| 315923 | BF998 | N-channel dual-gate MOSFET | NXP Semiconductors |
| 315924 | BF998 | Silicon N-channel dual-gate MOS-FETs | Philips |
| 315925 | BF998 | Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) | Siemens |
| 315926 | BF998 | N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode | Vishay |
| 315927 | BF998A | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode | Vishay |
| 315928 | BF998B | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode | Vishay |
| 315929 | BF998R | RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB | Infineon |
| 315930 | BF998R | N-channel dual-gate MOSFET | NXP Semiconductors |
| 315931 | BF998R | Silicon N-channel dual-gate MOS-FETs | Philips |
| 315932 | BF998R | Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) | Siemens |
| 315933 | BF998R | N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode | Vishay |
| 315934 | BF998RA | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode | Vishay |
| 315935 | BF998RAW | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode | Vishay |
| 315936 | BF998RB | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode | Vishay |
| 315937 | BF998RBW | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode | Vishay |
| 315938 | BF998RW | N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode | Vishay |
| 315939 | BF998W | Silicon N-Channel MOSFET Tetrode | Infineon |
|
| 315940 | BF998W | Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) | Siemens |
| 315941 | BF998WR | N-channel dual-gate MOSFET | NXP Semiconductors |
| 315942 | BF998WR | N-channel dual-gate MOS-FET | Philips |
| 315943 | BF999 | Silicon N-Channel MOSFET Triode | Infineon |
| 315944 | BF999 | RF-MOSFET - VDS=15V, gfs=16mS, Gp=25dB, F=1dB | Infineon |
| 315945 | BF999 | Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) | Siemens |
| 315946 | BFAP15 | Tranzystor wielkiej częstotliwości specjalny | Ultra CEMI |
| 315947 | BFAP57 | Tranzystor wielkiej częstotliwości specjalny | Ultra CEMI |
| 315948 | BFAP58 | Tranzystor wielkiej częstotliwości specjalny | Ultra CEMI |
| 315949 | BFAP59 | Tranzystor wielkiej częstotliwości specjalny | Ultra CEMI |
| 315950 | BFAP80 | Tranzystor wielkiej częstotliwości specjalny | Ultra CEMI |
| 315951 | BFAP83 | Tranzystor wielkiej częstotliwości specjalny | Ultra CEMI |
| 315952 | BFC13 | 4TH GENERATION MOSFET | SemeLAB |
| 315953 | BFC40 | N?CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS | SemeLAB |
| 315954 | BFC43 | 4TH GENERATION MOSFET | SemeLAB |
| 315955 | BFC50 | 4TH GENERATION MOSFET | SemeLAB |
| 315956 | BFC505 | NPN wideband cascode transistor | Philips |
| 315957 | BFC51 | 4TH GENERATION MOSFET | SemeLAB |
| 315958 | BFC520 | NPN wideband cascode transistor | Philips |
| 315959 | BFC60 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS | SemeLAB |
| 315960 | BFC61 | 4TH GENERATION MOSFET | SemeLAB |
