| 314881 | BF1211WR | N-channel dual-gate MOSFET | NXP Semiconductors |
| 314882 | BF1211WR | N-channel dual-gate MOS-FETs | Philips |
| 314883 | BF1211WR | BF1211; BF1211R; BF1211WR; N-channel dual-gate MOS-FETs | Philips |
| 314884 | BF1212 | N-channel dual-gate MOSFET | NXP Semiconductors |
| 314885 | BF1212 | BF1212; BF1212R; BF1212WR; N-channel dual-gate MOS-FETs | Philips |
| 314886 | BF1212 | N-channel dual-gate MOS-FETs | Philips |
| 314887 | BF1212R | N-channel dual-gate MOSFET | NXP Semiconductors |
| 314888 | BF1212R | N-channel dual-gate MOS-FETs | Philips |
| 314889 | BF1212R | BF1212; BF1212R; BF1212WR; N-channel dual-gate MOS-FETs | Philips |
| 314890 | BF1212WR | N-channel dual-gate MOSFET | NXP Semiconductors |
| 314891 | BF1212WR | N-channel dual-gate MOS-FETs | Philips |
| 314892 | BF1212WR | BF1212; BF1212R; BF1212WR; N-channel dual-gate MOS-FETs | Philips |
| 314893 | BF1214 | Dual N-channel dual-gate MOSFET | NXP Semiconductors |
| 314894 | BF1215 | Dual N-channel dual-gate MOSFET | NXP Semiconductors |
| 314895 | BF1216 | Dual N-channel dual-gate MOSFET | NXP Semiconductors |
| 314896 | BF1217WR | N-channel dual-gate MOSFET | NXP Semiconductors |
| 314897 | BF1218 | Dual N-channel dual-gate MOSFET | NXP Semiconductors |
| 314898 | BF155 | Epitaxial planar NPN transistor designed for UHF amplifier and mixer-oscillator applications up to 900MHz | SGS-ATES |
| 314899 | BF155 | RF transistor | SGS-ATES |
|
| 314900 | BF158 | Transistor for IF amplifiers | SGS-ATES |
| 314901 | BF160 | Transistor for IF amplifiers | SGS-ATES |
| 314902 | BF161 | Epitaxial planar NPN transistor, intended for UHF amplifier, mixer and oscillator applications | SGS-ATES |
| 314903 | BF161 | RF transistor | SGS-ATES |
| 314904 | BF166 | Epitaxial planar NPN transistor designed to be used as a gain-controlled VHF amplifier | SGS-ATES |
| 314905 | BF166 | RF transistor | SGS-ATES |
| 314906 | BF167 | Silicon high frequency, low power NPN transistor | IPRS Baneasa |
| 314907 | BF167 | Silicon NPN Planar RF Transistor | IPRS Baneasa |
| 314908 | BF167 | Ge-ALLOY-pnp TRANSISTOR | IPRS Baneasa |
| 314909 | BF167 | High frequency transistor | mble |
| 314910 | BF167 | High frequency transistor | mble |
| 314911 | BF167 | Silicon N-P-N low power transistor | Mullard |
| 314912 | BF167 | Silicon Transistor | Mullard |
| 314913 | BF167 | NPN silicon transistor, RF amplification | SESCOSEM |
| 314914 | BF167 | Transistor for IF amplifiers | SGS-ATES |
| 314915 | BF167 | Tranzystor wielkiej częstotliwości | Ultra CEMI |
| 314916 | BF167 | Tranzystor krzemowy małej mocy, wielkiej częstotliwości | Ultra CEMI |
| 314917 | BF173 | 0.200W General Purpose NPN Metal Can Transistor. 25V Vceo, 0.030A Ic, 15 hFE. | Continental Device India Limited |
| 314918 | BF173 | Silicon high frequency, low power NPN transistor | IPRS Baneasa |
| 314919 | BF173 | Si-PLANAR-npn | IPRS Baneasa |
| 314920 | BF173 | Silicon NPN Epitaxial-Planar RF Transistor | IPRS Baneasa |
