| 311481 | BD5358G | Voltage detector, 5.8V | ROHM |
| 311482 | BD5358G-TR | Voltage Detector with Adjustable Delay Time | ROHM |
| 311483 | BD5358G/FVE | Voltage detectors > CMOS Voltage detector IC with external C delay circuit (CMOS output type) | ROHM |
| 311484 | BD5359 | VOLTAGE DETECTOR IC | etc |
| 311485 | BD5359FVE | Voltage detector, 5.9V | ROHM |
| 311486 | BD5359FVE-TR | Voltage Detector with Adjustable Delay Time | ROHM |
| 311487 | BD5359G | Voltage detector, 5.9V | ROHM |
| 311488 | BD5359G-TR | Voltage Detector with Adjustable Delay Time | ROHM |
| 311489 | BD5359G/FVE | Voltage detectors > CMOS Voltage detector IC with external C delay circuit (CMOS output type) | ROHM |
| 311490 | BD535J | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 311491 | BD536 | 50.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 20 hFE. | Continental Device India Limited |
| 311492 | BD536 | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 311493 | BD536 | Epitaxial-base silicon P-N-P VERSAWATT transistor. -60V, 50W. | General Electric Solid State |
| 311494 | BD536 | complementary silicon PNP plastic power transistor. 60 V, 4 A, 50 W. | Motorola |
| 311495 | BD536 | Silicon PNP Power Transistors TO-220C package | Savantic |
| 311496 | BD536 | COMPLEMENTARY SILICON POWER TRANSISTORS | SGS Thomson Microelectronics |
| 311497 | BD536 | COMPLEMENTARY SILICON POWER TRANSISTORS | SGS Thomson Microelectronics |
| 311498 | BD536 | Epitaxial-base transistor for linear and switching applications | SGS-ATES |
| 311499 | BD536 | COMPLEMENTARY SILICON POWER TRANSISTORS | ST Microelectronics |
|
| 311500 | BD5360 | VOLTAGE DETECTOR IC | etc |
| 311501 | BD5360FVE | Voltage detector, 6.0V | ROHM |
| 311502 | BD5360FVE-TR | Voltage Detector with Adjustable Delay Time | ROHM |
| 311503 | BD5360G | Voltage detector, 6V | ROHM |
| 311504 | BD5360G-TR | Voltage Detector with Adjustable Delay Time | ROHM |
| 311505 | BD5360G/FVE | Voltage detectors > CMOS Voltage detector IC with external C delay circuit (CMOS output type) | ROHM |
| 311506 | BD536J | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 311507 | BD537 | 50.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 15 hFE. | Continental Device India Limited |
| 311508 | BD537 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 311509 | BD537 | Epitaxial-base silicon N-P-N VERSAWATT transistor. 80V, 50W. | General Electric Solid State |
| 311510 | BD537 | complementary silicon NPN plastic power transistor. 80 V, 4 A, 50 W. | Motorola |
| 311511 | BD537 | Silicon NPN Power Transistors TO-220C package | Savantic |
| 311512 | BD537 | COMPLEMENTARY SILICON POWER TRANSISTORS | SGS Thomson Microelectronics |
| 311513 | BD537 | COMPLEMENTARY SILICON POWER TRANSISTORS | SGS Thomson Microelectronics |
| 311514 | BD537 | Epitaxial-base transistor for linear and switching applications | SGS-ATES |
| 311515 | BD537 | COMPLEMENTARY SILICON POWER TRANSISTORS | ST Microelectronics |
| 311516 | BD537J | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 311517 | BD538 | 50.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 15 hFE. | Continental Device India Limited |
| 311518 | BD538 | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 311519 | BD538 | Epitaxial-base silicon P-N-P VERSAWATT transistor. -80V, 50W. | General Electric Solid State |
| 311520 | BD538 | complementary silicon PNP plastic power transistor. 80 V, 4 A, 50 W. | Motorola |
