| 306681 | BD137 | hfe min 40 Transistor polarity NPN Current Ic continuous max 1 A Voltage Vceo 60 V Current Ic (hfe) 0.15 A Power Ptot 12.5 W Temperature power 25 ?C Transistors number of 1 | SGS Thomson Microelectronics |
| 306682 | BD137 | Transistor NPN | Siemens |
| 306683 | BD137 | NPN Silicon Transistor for AF driver and power stages of medium output | Siemens |
| 306684 | BD137 | NPN SILICON TRANSISTORS | Siemens |
| 306685 | BD137 | Silicon NPN epitaxial medium power transistor | TOSHIBA |
| 306686 | BD137 | Tranzystor małej częstotliwości dużej mocy | Ultra CEMI |
| 306687 | BD137 paired | NPN Silicon Transistor for AF driver and power stages of medium output | Siemens |
| 306688 | BD137-10 | 12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 63 - 160 hFE. Complementary BD138-10 | Continental Device India Limited |
| 306689 | BD137-10 | TO-126 Plastic-Encapsulate Biploar Transistors | Micro Commercial Components |
| 306690 | BD137-10 | NPN power transistors | Philips |
| 306691 | BD137-10 | NPN Silicon Transistor for AF driver and power stages of medium output | Siemens |
| 306692 | BD137-10 | NPN SILICON TRANSISTORS | Siemens |
| 306693 | BD137-16 | 12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 100 - 250 hFE. Complementary BD138-16 | Continental Device India Limited |
| 306694 | BD137-16 | TO-126 Plastic-Encapsulate Biploar Transistors | Micro Commercial Components |
| 306695 | BD137-16 | NPN power transistors | Philips |
| 306696 | BD137-25 | 12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 160 - 400 hFE. Complementary BD138-25 | Continental Device India Limited |
| 306697 | BD137-6 | 12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 - 100 hFE. Complementary BD138-6 | Continental Device India Limited |
| 306698 | BD137-6 | TO-126 Plastic-Encapsulate Biploar Transistors | Micro Commercial Components |
| 306699 | BD137-6 | NPN SILICON TRANSISTORS | Siemens |
|
| 306700 | BD137/10 | Silicon NPN Epitaxial Planar Power Transistor | IPRS Baneasa |
| 306701 | BD137/16 | Silicon NPN Epitaxial Planar Power Transistor | IPRS Baneasa |
| 306702 | BD137/25 | Silicon NPN Epitaxial Planar Power Transistor | IPRS Baneasa |
| 306703 | BD137/4 | Silicon NPN Epitaxial Planar Power Transistor | IPRS Baneasa |
| 306704 | BD137/6 | Silicon NPN Epitaxial Planar Power Transistor | IPRS Baneasa |
| 306705 | BD13710S | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 306706 | BD13710STU | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 306707 | BD13716S | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 306708 | BD13716STU | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 306709 | BD1376S | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 306710 | BD1376STU | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 306711 | BD138 | Leaded Power Transistor General Purpose | Central Semiconductor |
| 306712 | BD138 | 12.500W Switching PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 - 250 hFE. Complementary BD137 | Continental Device India Limited |
| 306713 | BD138 | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 306714 | BD138 | Low frequency, medium power silicon PNP transistor | IPRS Baneasa |
| 306715 | BD138 | Silicon PNP Epitaxial Planar Power Transistor | IPRS Baneasa |
| 306716 | BD138 | Si-PLANAR EPITAXIAL-pnp TRANSISTOR | IPRS Baneasa |
| 306717 | BD138 | Low frequency transistor | mble |
| 306718 | BD138 | Low frequency transistor | mble |
| 306719 | BD138 | Low frequency transistor | mble |
| 306720 | BD138 | Low frequency transistor | mble |
