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Datasheets found :: 1726161
Page: << | 7474 | 7475 | 7476 | 7477 | 7478 | 7479 | 7480 | 7481 | 7482 | 7483 | 7484 | >>
No.Part NameDescriptionManufacturer
299121BC303Leaded Small Signal Transistor General PurposeCentral Semiconductor
299122BC303 0.850W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.500A Ic, 40 - 240 hFE.Continental Device India Limited
299123BC303PNP SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHESMicro Electronics
299124BC303Transistor, medium power audio amplifiersSGS-ATES
299125BC303-4 0.850W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.500A Ic, 40 - 80 hFE.Continental Device India Limited
299126BC303-5 0.850W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.500A Ic, 70 - 140 hFE.Continental Device India Limited
299127BC303-6 0.850W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.500A Ic, 120 - 240 hFE.Continental Device India Limited
299128BC304Leaded Small Signal Transistor General PurposeCentral Semiconductor
299129BC304 0.850W General Purpose PNP Metal Can Transistor. 45V Vceo, 0.500A Ic, 40 - 240 hFE.Continental Device India Limited
299130BC304PNP SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHESMicro Electronics
299131BC304Transistor, medium power audio amplifiersSGS-ATES
299132BC307 0.350W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 120 - 800 hFEContinental Device India Limited
299133BC307Switching and Amplifier ApplicationsFairchild Semiconductor
299134BC307Si-PLANAR EPITAXIAL-pnp TRANSISTORIPRS Baneasa
299135BC307General Purpose TransistorKorea Electronics (KEC)
299136BC307PNP SILICON PLANAR EPITAXIAL TRANSISTORSMicro Electronics
299137BC307Amplifier Transistors(PNP)Motorola
299138BC307Silicon p-n-p low power transistorMullard
299139BC307Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 BulkNew Jersey Semiconductor


299140BC307Amplifier Transistor PNPON Semiconductor
299141BC307PNP general purpose transistorsPhilips
299142BC307Transistor PNPSiemens
299143BC307PNP Silicon Transistor for AF pre- and driver stages as well as for universal applicationSiemens
299144BC307Tranzystor małej częstotliwości małej mocyUltra CEMI
299145BC307Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA.USHA India LTD
299146BC307-16Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 T/RNew Jersey Semiconductor
299147BC307-DAmplifier Transistors PNP SiliconON Semiconductor
299148BC307A 1.000W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 120 - 220 hFEContinental Device India Limited
299149BC307APNP EPITAXIAL SILICON TRANSISTORFairchild Semiconductor
299150BC307ASi-PLANAR EPITAXIAL-pnp TRANSISTOR h21E=β=90 >40IPRS Baneasa
299151BC307ATrans GP BJT PNP 45V 0.1A 3-Pin TO-92New Jersey Semiconductor
299152BC307ASilicon PNP transistor, general purposeSESCOSEM
299153BC307APNP silicon transistor, audio amplification and general purposeSESCOSEM
299154BC307APNP Silicon Transistor for AF pre- and driver stages as well as for universal applicationSiemens
299155BC307ABUPNP Epitaxial Silicon TransistorFairchild Semiconductor
299156BC307APGeneral purpose PNP transistorFERRANTI
299157BC307ATAPNP Epitaxial Silicon TransistorFairchild Semiconductor
299158BC307B 0.350W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 200 - 460 hFEContinental Device India Limited
299159BC307BPNP Epitaxial Silicon TransistorFairchild Semiconductor
299160BC307BAmplifier Transistors(PNP)Motorola


Datasheets found :: 1726161
Page: << | 7474 | 7475 | 7476 | 7477 | 7478 | 7479 | 7480 | 7481 | 7482 | 7483 | 7484 | >>


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