| 225761 | AEY30 | Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language | Siemens |
| 225762 | AEY30A | Germanium Tunnel Diode | Siemens |
| 225763 | AEY30A | Germanium Tunnel Diode | Siemens |
| 225764 | AEY30A | Germanium tunnel diode | Siemens |
| 225765 | AEY30A | Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language | Siemens |
| 225766 | AEY30B | Germanium Tunnel Diode | Siemens |
| 225767 | AEY30B | Germanium Tunnel Diode | Siemens |
| 225768 | AEY30B | Germanium tunnel diode | Siemens |
| 225769 | AEY30B | Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language | Siemens |
| 225770 | AEY30C | Germanium Tunnel Diode | Siemens |
| 225771 | AEY30C | Germanium Tunnel Diode | Siemens |
| 225772 | AEY30C | Germanium tunnel diode | Siemens |
| 225773 | AEY30C | Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language | Siemens |
| 225774 | AEY30D | Germanium Tunnel Diode | Siemens |
| 225775 | AEY30D | Germanium Tunnel Diode | Siemens |
| 225776 | AEY30D | Germanium tunnel diode | Siemens |
| 225777 | AEY30D | Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language | Siemens |
| 225778 | AEY31 | Detector diode | mble |
| 225779 | AEY31 | Subminiature germanium bonded backward diodes for use up to J band | Mullard |
|
| 225780 | AEY31A | Detector diode | mble |
| 225781 | AEY31A | Subminiature germanium bonded backward diodes for use up to J band | Mullard |
| 225782 | AF002C1-32 | GaAs MMIC Control FET in SOT 143 DC-2.5 GHz | Alpha Industries Inc |
| 225783 | AF002C1-39 | GaAs IC Control FET Series DC-2.5 GHz | Alpha Industries Inc |
| 225784 | AF002C1-39 | GaAs IC Control FET Series DC-2.5 GHz | Skyworks Solutions |
| 225785 | AF002C4-32 | GaAs control FET | Alpha Industries Inc |
| 225786 | AF002C4-39 | GaAs IC Control FET Series DC-2.5 GHz | Alpha Industries Inc |
| 225787 | AF002C4-39 | GaAs IC Control FET Series DC-2.5 GHz | Skyworks Solutions |
| 225788 | AF002N2-32 | GaAs IC 15 dB Voltage Variable Attenuator Single Control DC–2 GHz | Alpha Industries Inc |
| 225789 | AF002N2-32 | GaAs IC 15 dB Voltage Variable Attenuator Single Control DC-2 GHz | Skyworks Solutions |
| 225790 | AF100-1CG | +/-18 V, 900 mW, universal active filter | National Semiconductor |
| 225791 | AF100-1CJ | +/-18 V, 900 mW, universal active filter | National Semiconductor |
| 225792 | AF100-1CN | +/-18 V, 900 mW, universal active filter | National Semiconductor |
| 225793 | AF100-1G | +/-18 V, 900 mW, universal active filter | National Semiconductor |
| 225794 | AF100-2CG | +/-18 V, 900 mW, universal active filter | National Semiconductor |
| 225795 | AF100-2CJ | +/-18 V, 900 mW, universal active filter | National Semiconductor |
| 225796 | AF100-2CN | +/-18 V, 900 mW, universal active filter | National Semiconductor |
| 225797 | AF100-2G | +/-18 V, 900 mW, universal active filter | National Semiconductor |
| 225798 | AF101 | Germanium PNP junction transistor, before and mixer stage 2MHz, IF amplifier 470kHz | TELEFUNKEN |
| 225799 | AF102 | Diffusion-alloyed germanium PNP RF transistor | VALVO |
| 225800 | AF105 | Germanium PNP junction transistor, IF amplifier | TELEFUNKEN |
