| 1688281 | W49L201S-70 | 256K X 8 CMOS FLASH MEMORY | Winbond Electronics |
| 1688282 | W49L201S-90 | 256K X 8 CMOS FLASH MEMORY | Winbond Electronics |
| 1688283 | W49L201T-70 | 256K X 8 CMOS FLASH MEMORY | Winbond Electronics |
| 1688284 | W49L201T-90 | 256K X 8 CMOS FLASH MEMORY | Winbond Electronics |
| 1688285 | W49L401 | 3.3-Volt Flash | Winbond Electronics |
| 1688286 | W49V002 | 256K x 8 CMOS FLASH MEMORY WITH LPC INTERFACE | Winbond Electronics |
| 1688287 | W49V002 | 256K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE | Winbond Electronics |
| 1688288 | W49V002,T,P | 3.3-Volt Flash 256Kx8 | Winbond Electronics |
| 1688289 | W49V002A | 3.3-Volt Flash 256Kx8 | Winbond Electronics |
| 1688290 | W49V002AP | 256K x 8 CMOS FLASH MEMORY WITH LPC INTERFACE | Winbond Electronics |
| 1688291 | W49V002AQ | 256K x 8 CMOS FLASH MEMORY WITH LPC INTERFACE | Winbond Electronics |
| 1688292 | W49V002FA | 3.3-Volt Flash 256Kx8 | Winbond Electronics |
| 1688293 | W49V002FAP | 256K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE | Winbond Electronics |
| 1688294 | W49V002FAQ | 256K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE | Winbond Electronics |
| 1688295 | W4NRD0X-0000 | Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | CREE POWER |
| 1688296 | W4NRD8C-U000 | Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | CREE POWER |
| 1688297 | W4NXD8C-0000 | Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | CREE POWER |
| 1688298 | W4NXD8C-L000 | Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | CREE POWER |
| 1688299 | W4NXD8C-S000 | Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | CREE POWER |
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| 1688300 | W4NXD8D-0000 | Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | CREE POWER |
| 1688301 | W4NXD8D-S000 | Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | CREE POWER |
| 1688302 | W4NXD8G-0000 | Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | CREE POWER |
| 1688303 | W51300 | FLASH VR CONTROLLER | Winbond Electronics |
| 1688304 | W5230 | ADPCM Synthesizer with 4 triggers, STA, STB, STC, RO (Romless controller) | Winbond Electronics |
| 1688305 | W5231 | ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (3 seconds @6.7K) | Winbond Electronics |
| 1688306 | W5232 | ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (6 seconds @6.7K) | Winbond Electronics |
| 1688307 | W5233 | ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (9 seconds @6.7K) | Winbond Electronics |
| 1688308 | W5234 | ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (12 seconds @6.7K) | Winbond Electronics |
| 1688309 | W523A008 | Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (8 sec) | Winbond Electronics |
| 1688310 | W523A010 | Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (10 sec) | Winbond Electronics |
| 1688311 | W523A012 | Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (12 sec) | Winbond Electronics |
| 1688312 | W523A015 | Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (15 sec) | Winbond Electronics |
| 1688313 | W523A020 | Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (20 sec) | Winbond Electronics |
| 1688314 | W523A025 | Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (25 sec) | Winbond Electronics |
| 1688315 | W523A030 | Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (30 sec) | Winbond Electronics |
| 1688316 | W523A040 | Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (40 sec) | Winbond Electronics |
| 1688317 | W523A050 | Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (50 sec) | Winbond Electronics |
| 1688318 | W523A060 | Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (60 sec) | Winbond Electronics |
| 1688319 | W523A070 | Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (70 sec) | Winbond Electronics |
| 1688320 | W523A080 | Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (80 sec) | Winbond Electronics |
