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Datasheets found :: 1726161
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No.Part NameDescriptionManufacturer
1031612SC838Transistor. FM radio RF amp, mix. conv, osc, IF amp . Collector-base voltage Vcbo = 35V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 30mA.USHA India LTD
1031622SC839FM/AM RADIO RF AMP,CONV,OSC,IF AMPUSHA India LTD
1031632SC853NPN SILICON EPITAXIAL TRANSISTORUnknow
1031642SC856Silicon NPN Triple Diffused LTP Transistor, intended for use in Video Power OutputHitachi Semiconductor
1031652SC857HSilicon NPN Triple Diffused LTP Transistor, intended for use in High Voltage SwitchingHitachi Semiconductor
1031662SC867Silicon NPN Power Transistors TO-66 packageSavantic
1031672SC892NPN SILICON EPITAXIAL TRANSISTORUnknow
1031682SC897Silicon NPN Triple Diffused Transistor, intended for use in 35~50W Hi Fi OutputHitachi Semiconductor
1031692SC898Silicon NPN Triple Diffused Transistor, intended for use in Hi Fi Power OutputHitachi Semiconductor
1031702SC89HGermanium NPN Alloyed Junction Transistor, intended for use in Medium Speed SwitchingHitachi Semiconductor
1031712SC900LOW FREQUENCY, LOW NOISE AMPLIFIERUSHA India LTD
1031722SC9011Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic =USHA India LTD
1031732SC90131W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATIONUSHA India LTD
1031742SC9014PRE-AMPLIFIER, LOW LEVEL & LOW NOISEUSHA India LTD
1031752SC9016TransistorsUSHA India LTD
1031762SC9018AM/FM IF AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNERUSHA India LTD
1031772SC907AHSilicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed SwitchingHitachi Semiconductor
1031782SC907HSilicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed SwitchingHitachi Semiconductor
1031792SC908MITSUBISHI RF POWER TRANSISTORMitsubishi Electric Corporation


1031802SC90HGermanium NPN Alloyed Junction Transistor, intended for use in Medium Speed SwitchingHitachi Semiconductor
1031812SC917Silicon NPN Planar Transistor, intended for use in TV Video IF Final StageHitachi Semiconductor
1031822SC91HGermanium NPN Alloyed Junction Transistor, intended for use in Medium Speed SwitchingHitachi Semiconductor
1031832SC923NPN Silicon TransistorNEC
1031842SC930AM Converter, FM RF.IF Amp ApplicationsSANYO
1031852SC933NP2SC933NPSANYO
1031862SC935Silicon NPN Triple Diffused Transistor, JEDEC TO-3, intended for use in Transless TV Stabilized Power SupplyHitachi Semiconductor
1031872SC936Silicon NPN Triple Diffused Transistor, JEDEC TO-3, intended for use in Transless TV Vertical Deflection OutputHitachi Semiconductor
1031882SC937Silicon NPN Triple Diffused Transistor, JEDEC TO-3, intended for use in Transless TV Horizontal Deflection OutputHitachi Semiconductor
1031892SC937TRANSLESS TV HORIZONTAL DEFLECTION OUTPUTUnknow
1031902SC940Trans GP BJT NPN 50V 0.15A 3-Pin TO-92 AmmoNew Jersey Semiconductor
1031912SC940Silicon NPN Power Transistors TO-3 packageSavantic
1031922SC940B/W TV Horizontal Deflection OutputUnknow
1031932SC941Silicon NPN epitaxial planar RF transistorTOSHIBA
1031942SC941TRANSISTOR SILICON NPN EPIITAXIAL TYPETOSHIBA
1031952SC941-OTRANSISTOR SILICON NPN EPIITAXIAL TYPETOSHIBA
1031962SC941-RTRANSISTOR SILICON NPN EPIITAXIAL TYPETOSHIBA
1031972SC941-YTRANSISTOR SILICON NPN EPIITAXIAL TYPETOSHIBA
1031982SC941TMTransistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter ApplicationsTOSHIBA
1031992SC942NPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS)TOSHIBA
1032002SC942TMNPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS)TOSHIBA


Datasheets found :: 1726161
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