| 1 | IPS15C-SO-G-LF | Flyback, Forward and Isolated | Microsemi |
| 2 | -7L | 536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM | Mitsubishi Electric Corporation |
| 3 | -8 | 536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM | Mitsubishi Electric Corporation |
| 4 | -8L | 536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM | Mitsubishi Electric Corporation |
| 5 | 0,5RM100 | High voltage silicon rectifiers (epoxy encapsulation) | SESCOSEM |
| 6 | 0,5RM120 | High voltage silicon rectifiers (epoxy encapsulation) | SESCOSEM |
| 7 | 0,5RM150 | High voltage silicon rectifiers (epoxy encapsulation) | SESCOSEM |
| 8 | 0,5RM200 | High voltage silicon rectifiers (epoxy encapsulation) | SESCOSEM |
| 9 | 0,5RM250 | High voltage silicon rectifiers (epoxy encapsulation) | SESCOSEM |
| 10 | 0,5RM80 | High voltage silicon rectifiers (epoxy encapsulation) | SESCOSEM |
| 11 | 0-1462000-1 | 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil | Tyco Electronics |
| 12 | 0-1462000-7 | 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil | Tyco Electronics |
| 13 | 0002 | HIGH SPEED, BUFFER AMPLIFIER AMP | M.S. Kennedy Corp. |
| 14 | 0032 | HIGH SPEED, FET INPUT DIFFERENTIAL OP-AMP | M.S. Kennedy Corp. |
| 15 | 0033 | FET INPUT HIGH SPEED VOLTAGE FOLLOWER/BUFFER AMPLIFIER | M.S. Kennedy Corp. |
| 16 | 01-XC6206 | XC6206 | Torex Semiconductor |
| 17 | 0100MS | Magnetic Shield | Texas Instruments |
| 18 | 0104-100 | 100 W, 28 V, 100-400 MHz, balanced transistor | Acrian |
| 19 | 0104-100 | 100 W, 28 V, 100-400 MHz common emitter transistor | GHz Technology |
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| 20 | 0104-100-2 | 100 W, 28 V, 100-400 MHz, balanced transistor | Acrian |
| 21 | 0105-100 | 100 W, 28 V, 100-500 MHz, UHF balanced transistor | Acrian |
| 22 | 0105-100 | 100 W, 28 V, 100-500 MHz common emitter transistor | GHz Technology |
| 23 | 0105-100 | CW Class C ≤ 1 Ghz | Microsemi |
| 24 | 0105-100-2 | 100 W, 28 V, 100-500 MHz, UHF balanced transistor | Acrian |
| 25 | 0105-100-3 | 100 W, 28 V, 100-500 MHz, UHF balanced transistor | Acrian |
| 26 | 0105-12 | 12 W, 28 V, 100-500 MHz, UHF balanced transistor | Acrian |
| 27 | 0105-12 | 12 W, 28 V, 100-500 MHz common emitter transistor | GHz Technology |
| 28 | 0105-12-2 | 12 W, 28 V, 100-500 MHz, UHF balanced transistor | Acrian |
| 29 | 0105-50 | 50 W, 28 V, 100-500 MHz, UHF balanced transistor | Acrian |
| 30 | 0105-50 | 50 W, 28 V, 100-500 MHz common emitter transistor | GHz Technology |
| 31 | 0105-50 | CW Class C ≤ 1 Ghz | Microsemi |
| 32 | 0105-50-2 | 50 W, 28 V, 100-500 MHz, UHF balanced transistor | Acrian |
| 33 | 015A2.0 | Diode Silicon Epitaxial Planar Type | TOSHIBA |
| 34 | 015A2.2 | Diode Silicon Epitaxial Planar Type | TOSHIBA |
| 35 | 015A2.4 | Diode Silicon Epitaxial Planar Type | TOSHIBA |
| 36 | 015A2.7 | Diode Silicon Epitaxial Planar Type | TOSHIBA |
| 37 | 015A3.0 | Diode Silicon Epitaxial Planar Type | TOSHIBA |
| 38 | 015A3.3 | Diode Silicon Epitaxial Planar Type | TOSHIBA |
| 39 | 015A3.6 | Diode Silicon Epitaxial Planar Type | TOSHIBA |
| 40 | 015A3.9 | Diode Silicon Epitaxial Planar Type | TOSHIBA |
